zxmn3am832tc Zetex Semiconductors plc., zxmn3am832tc Datasheet - Page 4

• Manufacturer Part Number: zxmn3am832tc
• Description: Mpps Miniature Package Power Solutions Dual 30v N-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3AM832
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated).
4
MIN.
30
1
0.106
TYP.
0.84
17.7
13.0
190
3.5
1.7
2.3
6.6
2.9
2.3
3.9
0.6
0.9
38
20
MAX.
0.12
0.18
0.95
100
0.5
UNIT CONDITIONS.
µA
nA
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
Ω
Ω
V
V
S
V
ISSUE 1 - OCTOBER 2005
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
V
D
D
D
DS
GS
GS
DS
DS
DD
G
DS
DS
J
GS
J
=2.5A
=2.5A
=250µA, V
GS
=250µA, V
=25°C, I
=25°C, I
=6.0Ω, V
=30V, V
=4.5V,I
=25 V, V
=15V,V
=15V,V
=10V, I
=4.5V, I
=0V
=±20V, V
=15V, I
S
F
D
D
GS
GS
=2.5A,
GS
=1.7A,
D
GS
D
GS
DS
=2.5A
GS
=2.5A
=2.0A
=2.5A
DS
=5V,
=10V,
=10V
=0V
= V
=0V
=0V,
=0V
GS