zxmn3am832tc Zetex Semiconductors plc., zxmn3am832tc Datasheet

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zxmn3am832tc

Manufacturer Part Number
zxmn3am832tc
Description
Mpps Miniature Package Power Solutions Dual 30v N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet
MPPS™ Miniature Package Power Solutions
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
DNB
ISSUE 1 - OCTOBER 2005
DEVICE
ZXMN3AM832TA
ZXMN3AM832TC
(BR)DSS
Low On - Resistance
Fast switching speed
Low threshold
Low gate drive
3mm x 2mm MLP
DC-DC Converters
Power Management Functions
Disconnection switches
Motor Control
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
= 30V; R
DS(ON)
REEL
13’‘
7
’‘
= 0.12 ; I
WIDTH
TAPE
8mm
8mm
D
= 3A
10000 units
QUANTITY
3000 units
PER REEL
1
PINOUT
ZXMN3AM832
G2
D2
3mm x 2mm Dual MLP
4
5
3x2mm Dual Die MLP
underside view
D2
S2
6
3
D1
7
2
G1
D1
8
1
S1

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zxmn3am832tc Summary of contents

Page 1

... Power Management Functions • Disconnection switches • Motor Control ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMN3AM832TA 7 ’‘ 8mm ZXMN3AM832TC 13’‘ 8mm DEVICE MARKING DNB ISSUE 1 - OCTOBER 2005 = 3A D QUANTITY PER REEL 3000 units 10000 units 1 ZXMN3AM832 3x2mm Dual Die MLP ...

Page 2

ZXMN3AM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V Pulsed Drain Current Continuous Source Current (Body Diode)(b)(f) Pulsed Source Current (Body Diode) Power Dissipation at TA=25°C ...

Page 3

V R DS(ON) 10 CE(SAT) Limited Limited 100ms 100m 10ms 1ms Note (a)(f) 10m Single Pulse, T =25°C amb 1 V Drain-Source Voltage (V) DS Safe Operating Area Note (a)( D=0.5 40 D=0.2 20 D=0.1 ...

Page 4

ZXMN3AM832 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

T = 25° 0.1 0 Drain-Source Voltage (V) DS Output Characteristics 10V 150° 25°C 0.1 2.0 2.5 3.0 3.5 V Gate-Source Voltage (V) GS Typical ...

Page 6

ZXMN3AM832 300 250 200 C ISS 150 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage TYPICAL CHARACTERISTICS 2. 1MHz 8 6 ...

Page 7

MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MILLIMETERS DIM MIN. MAX. A 0.80 1.00 A1 0.00 0.05 A2 0.65 0.75 0.0255 A3 0.15 0.25 b 0.24 0.34 b1 0.17 ...

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