si7104dn Vishay, si7104dn Datasheet - Page 5

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si7104dn

Manufacturer Part Number
si7104dn
Description
N-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
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si7104dn-T1-E3
Manufacturer:
Infineon
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si7104dn-T1-GE3
Manufacturer:
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73406
S-80581-Rev. B, 17-Mar-08
1.6
1.4
1.2
1.0
0.8
0.6
60
10
1
0.00
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
Threshold Voltage
T
= 150 °C
0.4
J
- Temperature (°C)
25
0.6
50
I
D
= 250 µA
75
0.8
0.01
100
0.1
10
0.01
100
1
T
J
= 25 °C
R
* V
Limited by
Safe Operating Area, Junction-to-Ambient
1.0
DS(on)
GS
125
> minimum V
*
V
1.2
150
DS
0.1
- Drain-to-Source Voltage (V)
Single Pulse
T
A
GS
= 25 °C
at which R
1
DS(on)
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
50
40
30
20
10
0
0.01
10
is specified
0
1 ms
10 ms
100 ms
1 s
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.1
1
100
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
1
2
Time (s)
Vishay Siliconix
10
3
Si7104DN
T
J
I
= 125 °C
D
www.vishay.com
= 26.1 A
100
4
1000
5
5

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