si7104dn Vishay, si7104dn Datasheet

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si7104dn

Manufacturer Part Number
si7104dn
Description
N-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7104dn-T1-E3
Manufacturer:
Infineon
Quantity:
235
Part Number:
si7104dn-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73406
S-80581-Rev. B, 17-Mar-08
Ordering Information: Si7104DN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
12
(V)
8
3.30 mm
D
7
D
0.0037 at V
6
0.007 at V
D
PowerPAK 1212-8
Bottom View
Si7104DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
h
R
ttp://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
D
DS(on)
GS
GS
1
(Ω)
J
= 2.5 V
S
= 4.5 V
= 150 °C)
2
S
N-Channel 12-V (D-S) MOSFET
3
S
3.30 mm
4
G
I
D
35
35
(A)
e
c, d
A
= 25 °C, unless otherwise noted
Q
g
23 nC
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• Low Thermal Resistance PowerPAK
• 100 % R
• Synchronous Rectification
• Point-of-Load
Symbol
T
J
with Small Size and Low 1.07 mm Profile
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFETs
G
- 55 to 150
26.1
20.9
3.2
3.8
2.4
Limit
N-Channel MOSFET
± 12
260
35
35
35
12
60
52
33
a, b
a, b
a, b
a, b
a, b
e
e
e
D
S
Vishay Siliconix
®
Si7104DN
Package
www.vishay.com
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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si7104dn Summary of contents

Page 1

... Bottom View Ordering Information: Si7104DN-T1-E3 (Lead (Pb)-free) Si7104DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si7104DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... Document Number: 73406 S-80581-Rev. B, 17-Mar-08 Symbol Test Conditions ° 3 di/dt = 100 A/µ Si7104DN Vishay Siliconix Min. Typ. Max 0.8 1.2 80 120 ° www.vishay.com Unit ...

Page 4

... Si7104DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 2 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage ...

Page 5

... Limited DS(on 0 °C A Single Pulse 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si7104DN Vishay Siliconix 0.010 0.009 I D 0.008 0.007 0.006 T = 125 °C J 0.005 °C 0.004 J 0.003 0.002 0.001 0.000 ...

Page 6

... Si7104DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Power, Junction-to-Case * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Document Number: 73406 S-80581-Rev. B, 17-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7104DN Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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