si7110dn Vishay, si7110dn Datasheet - Page 3

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si7110dn

Manufacturer Part Number
si7110dn
Description
N-channel 20-v D-s Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73143
S-80581-Rev. E, 17-Mar-08
0.010
0.008
0.006
0.004
0.002
0.000
60
10
10
1
8
6
4
2
0
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
0.2
DS
On-Resistance vs. Drain Current
10
= 21.1 A
5
V
V
= 10 V
GS
SD
T
Q
J
= 4.5 V
g
- Source-to-Drain Voltage (V)
= 150 °C
- Total Gate Charge (nC)
0.4
I
20
D
10
Gate Charge
- Drain Current (A)
0.6
30
15
0.8
40
20
V
GS
T
= 10 V
J
= 25 °C
1.0
50
25
1.2
60
30
0.024
0.020
0.016
0.012
0.008
0.004
0.000
2500
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
C
GS
I
= 21.1 A
D
rss
V
= 5 A
2
4
= 10 V
DS
V
T
0
GS
- Drain-to-Source Voltage (V)
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
Capacitance
25
8
4
I
C
D
oss
= 21.1 A
C
50
Vishay Siliconix
iss
12
6
75
Si7110DN
www.vishay.com
100
16
8
125
150
10
20
3

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