si7110dn Vishay, si7110dn Datasheet

no-image

si7110dn

Manufacturer Part Number
si7110dn
Description
N-channel 20-v D-s Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7110dn-T1-E3
Manufacturer:
VISHAY
Quantity:
19 321
Part Number:
si7110dn-T1-E3
Manufacturer:
VISHAY
Quantity:
4 000
Part Number:
si7110dn-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si7110dn-T1-E3
Quantity:
650
Company:
Part Number:
si7110dn-T1-E3
Quantity:
48 600
Part Number:
si7110dn-T1-GE3
Manufacturer:
VISHAY
Quantity:
4 000
Part Number:
si7110dn-T1-GE3
Manufacturer:
VISHAY
Quantity:
256
Part Number:
si7110dn-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si7110dn-T1-GE3
Quantity:
2 990
Company:
Part Number:
si7110dn-T1-GE3
Quantity:
2 990
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73143
S-80581-Rev. E, 17-Mar-08
Ordering Information: Si7110DN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
20
(V)
8
3.30 mm
D
7
D
0.0078 at V
0.0053 at V
6
PowerPAK 1212-8
D
R
Si7110DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
N-Channel 20-V (D-S) Fast Switching MOSFET
Bottom View
DS(on)
http://www.vishay.com/ppg?73257
D
GS
GS
(Ω)
1
J
a
= 4.5 V
= 10 V
S
= 150 °C)
a
2
S
3
S
a
3.30 mm
4
I
D
21.1
17.4
G
(A)
a
b, c
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
A
Q
= 25 °C, unless otherwise noted
14 nC
Steady State
Steady State
g
L = 0 1 mH
T
T
T
T
(Typ.)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• New Low Thermal Resistance PowerPAK
• PWM Optimized
• 100 % R
• Synchronous Rectification
• Synchronous Buck
Symbol
Symbol
T
R
R
J
Package with Low 1.07 mm Profile
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
®
Gen II Power MOSFET
Typical
10 s
21.1
16.9
3.2
3.8
2.0
1.9
24
65
G
- 55 to 150
± 20
N-Channel MOSFET
260
20
60
35
61
Steady State
Maximum
D
S
13.5
10.8
1.3
1.5
0.8
2.4
33
81
Vishay Siliconix
Si7110DN
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for si7110dn

si7110dn Summary of contents

Page 1

... Bottom View Ordering Information: Si7110DN-T1-E3 (Lead (Pb)-free) Si7110DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current ...

Page 2

... Si7110DN Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... 1000 500 1.6 1.4 1.2 1.0 0.8 0 0.024 0.020 0.016 0.012 0.008 °C J 0.004 0.000 0.8 1.0 1.2 Si7110DN Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 21 100 T - Junction Temperature (°C) J On-Resistance vs ...

Page 4

... Si7110DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA 0.2 D 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on D(on) Limited °C A 0.1 Single Pulse BV Limited DSS ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73143. Document Number: 73143 S-80581-Rev. E, 17-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7110DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

Related keywords