2n7002xfb Diodes, Inc., 2n7002xfb Datasheet - Page 3

• Manufacturer Part Number: 2n7002xfb
• Description: N-channel Enhancement Mode Field Mosfet
• Manufacturer: Diodes, Inc.

2N7002XFB
Document number: DS35449 Rev. 1 - 2
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
4.5
3.5
2.5
1.5
0.5
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
2
1
0
0
5
4
3
2
1
0
-50
0
V
GS
V
GS
0.5
=5.0V
=10V
-25
V , DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristics
TJ, JUNCTION TEMPERATURE (°C)
0.1
DS
I , DRAIN-SOURCE CURRENT (A)
1
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Charge
0
1.5
0.2
25
V
2
GS
V
GS
=4.5V
2.5
=4.0V
V
0.3
50
GS
=3.5V
3
75
V
0.4
I =250µA
GS
3.5
D
=5V
100
4
V
I =1mA
V
0.5
D
GS
GS
V
125
GS
=2.5V
=3.0V
4.5
=10V
150
5
0.6
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0.01
0.1
50
45
40
35
30
25
20
15
10
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
5
0
1
0
0
2
1
-50
V
Fig. 4 On-Resistance Variation with Temperature
DS
= 5.0V
0.5
-25
Fig. 2 Typical Transfer Characteristics
Fig. 6 Typical Junction Capacitance
TJ, JUNCTION TEMPERATURE ( C)
V , DRAIN-SOURCE VOLTAGE
5
V
DS
GS
1
0
, GATE-SOURCE VOLTAGE
1.5
T =85 C
10
25
A
T =25 C
A
°
2
50
°
15
2.5
T =125 C
75
A
T =-55 C
A
2N7002XFB
°
100 125
3
20
V
I =115mA
°
D
T =150 C
GS
© Diodes Incorporated
f=1MHz
A
°
V
I =115mA
D
C
3.5
C
=10V,
GS
RSS
C
OSS
=5V,
ISS
August 2011
°
25
150
4