2n7002xfb Diodes, Inc., 2n7002xfb Datasheet

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2n7002xfb

Manufacturer Part Number
2n7002xfb
Description
N-channel Enhancement Mode Field Mosfet
Manufacturer
Diodes, Inc.
Datasheet
Ordering Information
Marking Information
Product Summary
Description and Applications
These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology.These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching
performance.These products are particularly suited for low voltage,
low current applications such as small
Notes:
Date Code Key
2N7002XFB
Document number: DS35449 Rev. 1 - 2
Load switching
.
Month
V
Code
Code
Year
(BR)DSS
60V
2. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
1. No purposefully added lead. Halogen and Antimony Free.
3. For packaging details, go to our website at http://www.diodes.com
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb203 Fire Retardants.
2N7002XFB-7
Part Number
Jan
1
3.0Ω @ V
2009
4.0Ω @ V
W
R
DS(ON)
Feb
(Note 3)
2
GS
GS
= 10V
= 5V
2010
Mar
3
X
Top View
T
Apr
A
400mA
330mA
4
= 25°C
I
D
2011
Y
www.diodes.com
DFN1006-3
May
DFN1006-3
5
Case
1 of 5
Features and Benefits
Mechanical Data
Jun
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
6
Equivalent Circuit
N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1.2kV HBM
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 2)
Qualified to AEC-Q101 Standards for High Reliability
Case: DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
Top View
3000/Tape & Reel
Packaging
2014
Oct
B
O
2N7002XFB
Nov
N
© Diodes Incorporated
August 2011
2015
C
Dec
D

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2n7002xfb Summary of contents

Page 1

... DFN1006-3 Top View Equivalent Circuit Case DFN1006-3 2010 2011 2012 Mar Apr May Jun Jul www.diodes.com 2N7002XFB Top View Packaging 3000/Tape & Reel 2013 2014 A B Aug Sep Oct Nov © Diodes Incorporated 2015 C Dec D ...

Page 2

... V - 0.7 1 iss - 4,7 C oss - 2.5 C rss t - 3.27 D(on 3. 12.025 D(off 6. www.diodes.com 2N7002XFB Value Units 60 ±20 260 mA 210 400 mA 310 Value Units 430 mW °C/W 290 840 mW °C/W 147 °C -55 to +150 Unit Test Condition - 0V 250μ µ 60V, V ...

Page 3

... I =1mA =250µ 100 125 150 www.diodes.com 2N7002XFB T =150 C A ° 5.0V T =125 ° ° ° 0.5 1 1.5 2 2 GATE-SOURCE VOLTAGE GS Fig. 2 Typical Transfer Characteristics ...

Page 4

... 2N7002XFB Document number: DS35449 Rev =25° =-55°C A 0.8 1 1.2 Dim Dimensions www.diodes.com 2N7002XFB DFN1006 Min Max Typ A 0.47 0.53 0.50 0 0.05 0.03 0.10 0.20 0.15 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 ⎯ ⎯ e 0.35 0.20 0.30 0.25 0.20 0.30 0.25 ⎯ ⎯ 0.40 All Dimensions in mm Value (in mm) 1 ...

Page 5

... Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com 2N7002XFB Document number: DS35449 Rev IMPORTANT NOTICE LIFE SUPPORT www.diodes.com 2N7002XFB August 2011 © Diodes Incorporated ...

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