2n7002l-al3-r Unisonic Technologies, 2n7002l-al3-r Datasheet - Page 2

• Manufacturer Part Number: 2n7002l-al3-r
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Unisonic Technologies

2N7002
Drain-Source Voltage
Drain-Gate Voltage (R
Gate Source Voltage
Drain Current
Power Dissipation
Derated Above 25°C
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Junction to Ambient
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
Drain-Source On-Voltage
On-State Drain Current
Static Drain-Source On-Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Pulsed Drain-Source Diode
Forward Current
Maximum Continuous Drain-Source
Diode Forward Current
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ABSOLUTE MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
PARAMETER
GS
≤1MΩ)
Continuous
Non Repetitive(tp<50μs)
Continuous
Pulsed
SYMBOL
R
V
V
BV
I
I
C
I
C
DS (ON)
DS (ON)
C
I
GSSR
GS(TH)
D(ON)
t
GSSF
V
t
I
DSS
OFF
Is
OSS
RSS
ON
SM
ISS
SD
DSS
(Ta=25°C unless otherwise noted.)
(T
A
=25°C, unless otherwise specified)
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
I
R
V
D
D
GS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DD
DD
GS
GEN
GEN
=200mA, V
=200mA, V
=60V, V
=25V,V
=0V, I
=10V,V
=30V, R
=30V, R
=0V, Is=115mA (Note )
=20V, V
= 10V, I
=-20V, V
= V
= 5.0V, I
=10V, I
=5.0V, I
=25Ω
=25Ω
TEST CONDITIONS
SYMBOL
SYMBOL
DS
V
V
V
T
θ
P
T
D
DGR
GSS
I
STG
, I
DSS
JA
D
=10μA
D
J
GS
DS
D
GS
D
D
L
L
DS
D
=500mA
=250μA
D
=150Ω
=25Ω
GS
GS
=500mA
DS
≥2V
=50mA
=0V,f=1.0MHz
=50mA
=0V
=0V
=0V
=10V
=10V
DS(ON)
-55 ~ +150
RATINGS
RATINGS
+ 150
±20
±40
300
800
200
625
1.6
60
60
MIN
500
60
1
Power MOSFET
2700
TYP
0.09
0.88
2.1
0.6
1.2
1.7
20
11
4
MAX UNIT
-100
3.75
100
115
2.5
1.5
3.5
7.5
1.5
0.8
50
25
20
20
1
5
QW-R206-037,F
mW/°C
°C/W
UNIT
UNIT
mW
mA
°C
°C
V
V
V
mA
mA
μA
nA
nA
nS
nS
pF
pF
pF
Ω
Ω
2 of 6
V
V
V
V
A