2n7002l-al3-r Unisonic Technologies, 2n7002l-al3-r Datasheet

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2n7002l-al3-r

Manufacturer Part Number
2n7002l-al3-r
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Unisonic Technologies
Datasheet
2N7002
N-CHANNEL
ENHANCEMENT MODE
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product is
particularly suited for low voltage, low current applications such as
small servo motor control, power MOSFET gate drivers, and other
switching applications
* High density cell design for low R
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
2.Gate
The UTC 2N7002 has been designed to minimize on-state
3P
ORDERING INFORMATION
2N7002-AE3-R
2N7002-AL3-R
DESCRIPTION
FEATURES
SYMBOL
MARKING
Normal
Lead Plating
UNISONIC TECHNOLOGIES CO., LTD
3.Drain
1.Source
Lead Free Plating
Ordering Number
2N7002L-AE3-R
2N7002L-AL3-R
DS(ON)
.
2N7002G-AE3-R
2N7002G-AL3-R
Halogen-Free
Lead-free: 2N7002L
Halogen-free: 2N7002G
SOT-323
Package
SOT-23
Pin Assignment
3
S
S
1
3
Power MOSFET
2
2
G
G
2
SOT-23
1
SOT-323
1
D
D
3
Tape Reel
Tape Reel
QW-R206-037,F
Packing
1 of 6

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2n7002l-al3-r Summary of contents

Page 1

... Voltage controlled small signal switch * Rugged and reliable * High saturation current capability SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2N7002-AE3-R 2N7002L-AE3-R 2N7002-AL3-R 2N7002L-AL3-R MARKING 3P Lead Plating www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd . DS(ON) Halogen-Free 2N7002G-AE3-R 2N7002G-AL3-R Power MOSFET 3 1 ...

Page 2

... DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage Maximum Pulsed Drain-Source Diode Forward Current Maximum Continuous Drain-Source Diode Forward Current Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw (Ta=25°C unless otherwise noted.) SYMBOL V DSS V ...

Page 3

... TEST CIRCUIT AND WAVEFORM (on) Output , V Input , V in 10% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com. GEN G S Figure off ) r 90% out 10% 50% 50% Pulse Width Figure 2. Switching Waveforms Power MOSFET L V OUT DUT t off t f 90% 10% Inverted ...

Page 4

... On-Resistance Varisation with Temperature 2 V =10V GS I =500mA D 1.75 1.5 1.25 1 0.75 0 Junction Temperature, T Transfer Characteristics 2 V =10V DS 1 1.2 0 Gate to Source Voltage, V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 8.0V 7.0V 2.5 6.0V 2 5.0V 1.5 4.0V 1 3. 2.5 2 1.5 1 0.5 0 150 0 75 100 125 (°C) J 1.1 25℃ ...

Page 5

... TYPICAL CHARACTERICS (Cont.) Breakdown Voltage Varisation with Temperature 1 250μA D 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 - Junction Temperature, T UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com. 0.5 0.1 0.05 0.01 0.005 0.001 150 0.2 125 75 100 (°C) J Power MOSFET Body Diode Forward Voltage Varisation with Temperature = =125℃ ...

Page 6

... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET ...

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