2sc4789 HITACHI, 2sc4789 Datasheet - Page 2

• Manufacturer Part Number: 2sc4789
• Description: Silicon Npn Triple Diffused
• Manufacturer: HITACHI

2SC4789
Electrical Characteristics (Ta = 25°C)
Item
———————————————————————————————————————————
Collector to emitter breakdown
voltage
———————————————————————————————————————————
Emitter to base breakdown
voltage
———————————————————————————————————————————
Collector cutoff current
———————————————————————————————————————————
DC current transfer ratio
———————————————————————————————————————————
Collector to emitter saturation
voltage
———————————————————————————————————————————
Base to emitter saturation
voltage
———————————————————————————————————————————
Fall time
———————————————————————————————————————————
Maximum Collector Power Dissipation Curve
200
150
100
50
0
Case Temperature
50
100
Symbol
V
V
I
h
V
V
t
CES
f
FE
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
Tc (°C)
150
200
Min
800
6
—
10
—
—
—
40
30
20
10
—
—
—
—
—
—
—
Typ
0
Collector to Emitter Voltage V
(100 V, 30 A)
Max
—
—
500
33
5
1.5
0.5
Area of Safe Operation
500
Unit
V
V
µA
—
V
V
µs
(800 V, 4 A)
1000
Test Conditions
I
R
I
V
R
V
I
I C = 16 A, I
I
I
I
f
C
E
C
C
CP
B2
H
CE
CE
BE
BE
= 10 mA, I
= 10 mA,
= 1 A
= 16 A, I
= 31.5 kHz
0.5 mA
= –3 A,
= 10 A, I
= 1500 V,
= 5 V,
=
= 0
1500
CE
B
B
B1
C
= 4 A
= 4 A
(V)
2000
= 0
= 2 A