2sc4536-t1 Renesas Electronics Corporation., 2sc4536-t1 Datasheet - Page 4

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2sc4536-t1

Manufacturer Part Number
2sc4536-t1
Description
Npn Silicon Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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S-PARAMETERS
4
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Remark The graphs indicate nominal characteristics.
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
Click here to download S-parameters.
[RF and Microwave]
URL http://www.csd-nec.com/
INSERTION POWER GAIN, MAXIMUM POWER
GAIN, MAG vs. COLLECTOR CURRENT
10
80
70
60
50
40
30
8
6
4
2
0
10
10
V
CE
= 10 V
IM
COLLECTOR CURRENT
3
Collector Current I
Collector Current I
, IM
30
30
IM
IM
IM
2+
3
2+
2–
[Device Parameters]
, IM
: V
: V
: V
f = 2 × 190 – 200 MHz
f = 90 + 100 MHz
f = 190 – 90 MHz
O
O
O
50
= 110 dB V/75
= 105 dB V/75
= 105 dB V/75
2–
50
vs.
C
C
100
100
(mA)
(mA)
G
|S
MAG
V
f = 1 GHz
max (u)
IM
IM
IM
21e
CE
2 tone each
2 tone each
2 tone each
3
2+
2–
|
= 10 V
2
Data Sheet PU10338EJ01V0DS
300
300
5
4
3
2
1
0
5
10
NOISE FIGURE vs.
COLLECTOR CURRENT
Collector Current I
20
50
C
(mA)
2SC4536
V
f = 1 GHz
100
CE
= 10 V
200

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