2sc4536-t1 Renesas Electronics Corporation., 2sc4536-t1 Datasheet - Page 3

• Manufacturer Part Number: 2sc4536-t1
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
2 500
2 000
1 500
1 000
500
100
400
0.5
0.2
80
60
40
20
10
0
0
5
2
1
5
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Free Air
R
th (j-a)
GAIN BANDWIDTH PRODUCT
TOTAL POWER DISSIPATION
vs. COLLECTOR CURRENT
vs. AMBIENT TEMPERATURE
Collector to Emitter Voltage V
25
10
312.5˚C/W
Ambient Temperature T
Collector Current I
50
Ceramic Substrate
16 cm
R
I
30
th (j-a)
B
= 0.6 mA
75
10
2
62.5˚C/W
50
0.7 mm (t)
100
C
(mA)
0.5 mA
A
100
A
(˚C)
= +25 C)
CE
V
0.4 mA
0.3 mA
0.2 mA
0.1 mA
CE
125
(V)
= 10 V
Data Sheet PU10338EJ01V0DS
150
300
20
300
100
0.5
0.2
50
30
10
20
10
5
2
1
0
0.1
REVERSE TRANSFER CAPACITANCE
0.1
vs. COLLECTOR TO BASE VOLTAGE
INSERTION POWER GAIN, MAXIMUM
POWER GAIN, MAG vs. FREQUENCY
1
Collector to Base Voltage V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
0.2 0.3
Collector Current I
1
|S
Frequency f (GHz)
G
21e
max (u)
|
2
0.5
5
10
C
MAG
10
(mA)
1
100
V
I
CB
f = 1 MHz
I
C
E
CE
V
= 50 mA
= 0 mA
(V)
CE
= 10 V
2SC4536
= 10 V
2
1 000
30
3
3