74AHC1G14GV,125 NXP Semiconductors, 74AHC1G14GV,125 Datasheet
74AHC1G14GV,125
Specifications of 74AHC1G14GV,125
74AHC1G14GV
935271665125
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74AHC1G14GV,125 Summary of contents
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Inverting Schmitt trigger Rev. 06 — 18 May 2009 1. General description 74AHC1G14 and 74AHCT1G14 are high-speed Si-gate CMOS devices. They provide an inverting buffer function with Schmitt trigger action. These devices are capable of transforming slowly changing ...
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... NXP Semiconductors 5. Marking Table 2. Marking codes Type number 74AHC1G14GW 74AHCT1G14GW 74AHC1G14GV 74AHCT1G14GV 6. Functional diagram mna023 Fig 1. Logic symbol 7. Pinning information 7.1 Pinning Fig 4. Pin configuration 7.2 Pin description Table 3. Pin description Symbol Pin n. GND 74AHC_AHCT1G14_6 Product data sheet 74AHC1G14; 74AHCT1G14 ...
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... NXP Semiconductors 8. Functional description Table 4. Function table H = HIGH voltage level LOW voltage level Input Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V supply voltage CC V input voltage I I input clamping current IK I output clamping current ...
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... NXP Semiconductors 11. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions For type 74AHC1G14 V HIGH-level output voltage 4.0 mA 8.0 mA LOW-level output voltage 4.0 mA 8.0 mA input leakage GND current 5 supply current 5 input I capacitance For type 74AHCT1G14 ...
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... NXP Semiconductors 11.1 Transfer characteristics Table 8. Transfer characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). See Symbol Parameter Conditions For type 74AHC1G14 V positive-going threshold V CC voltage negative-going threshold V CC voltage hysteresis voltage For type 74AHCT1G14 V positive-going threshold V CC voltage ...
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... NXP Semiconductors 12. Dynamic characteristics Table 9. Dynamic characteristics GND = 3.0 ns. For waveform see r f Symbol Parameter Conditions For type 74AHC1G14 t propagation delay power per buffer; PD dissipation pF MHz; L capacitance V = GND For type 74AHCT1G14 t propagation delay power per buffer; PD dissipation V = GND to V ...
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... NXP Semiconductors 13. Waveforms V A input M t PHL Y output V M The test data is given in Table 10 Fig 5. The input (A) to output (Y) propagation delays Table 10. Test data Type number Input V I 74AHC1G14 GND to V 74AHCT1G14 GND to 3.0 V 13.1 Transfer characteristic waveforms Fig 7. Transfer characteristic ...
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... NXP Semiconductors 1 (mA Fig 9. Typical 74AHC1G14 transfer characteristics 3 Fig 11. Typical 74AHC1G14 transfer characteristics; V 74AHC_AHCT1G14_6 Product data sheet 74AHC1G14; 74AHCT1G14 mna401 I CC (mA (V) I Fig 10. Typical 74AHC1G14 transfer characteristics (mA 5 Rev. 06 — 18 May 2009 Inverting Schmitt trigger 4 mna403 6 V (V) I © NXP B.V. 2009. All rights reserved. ...
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... NXP Semiconductors (mA Fig 12. Typical 74AHCT1G14 transfer characteristics 4 14. Application information The slow input rise and fall times cause additional power dissipation, which can be calculated using the following formula add additional power dissipation ( W); add f = input frequency (MHz input rise time (ns input fall time (ns ...
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... NXP Semiconductors 200 I CC(AV 150 100 2.0 Fig 14. Average additional I CC trigger devices; linear change of V 0. For 74AHC1G14 For 74AHCT1G14: T Fig 16. Relaxation oscillator using the 74AHC1G14 and 74AHCT1G14 74AHC_AHCT1G14_6 Product data sheet 74AHC1G14; 74AHCT1G14 mna036 I CC(AV positive-going edge negative-going edge 4 ...
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... NXP Semiconductors 15. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION IEC SOT353-1 Fig 17 ...
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... NXP Semiconductors Plastic surface-mounted package; 5 leads DIMENSIONS (mm are the original dimensions UNIT 0.100 0.40 1.1 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT753 Fig 18. Package outline SOT753 (SC-74A) 74AHC_AHCT1G14_6 Product data sheet 74AHC1G14; 74AHCT1G14 scale 3.1 1.7 3.0 0.6 0.95 2 ...
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... NXP Semiconductors 16. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal-Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 17. Revision history Table 12. Revision history Document ID Release date 74AHC_AHCT1G14_6 20090518 • ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 5 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 Functional description . . . . . . . . . . . . . . . . . . . 3 9 Limiting values Recommended operating conditions Static characteristics 11.1 Transfer characteristics . . . . . . . . . . . . . . . . . . . 5 12 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 13 Waveforms ...