2sc2688l-x-t60 Unisonic Technologies, 2sc2688l-x-t60 Datasheet - Page 4

• Manufacturer Part Number: 2sc2688l-x-t60
• Description: Npn Epitaxial Silicon Transistor
• Manufacturer: Unisonic Technologies

2SC2688
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10
70
60
50
40
30
20
10
8
6
4
2
0
14
12
10
0
Collector TO Emitter Voltage, V
8
6
4
2
0
Base to Emitter Voltage, V
Ambient Temperature, Ta (℃)
Collector Current vs. Base to
Total Power Dissipation Vs .
25 50
0.2
Collector to Emitter Voltage
Ambinet Temperature
2
Collector Current vs.
0.4
Emitter Voltage
4
0.6
75 100 125 150
6
Infinite Heat Sink
0.8
8 10
V
150µA
100µA
I
B
CE
1.0
=50µA
=10V
BE
1.2
12
(V)
(Ta=25 ℃ )
CE
1.4
(V)
14
NPN EPITAXIAL SILICON TRANSISTOR
200
100
1.25
0.75
0.25
50
10
3.0
2.5
2.0
1.5
1.0
0.5
0.1
1.5
1.0
0.5
5
1
Collector TO Emitter Voltage, V
0
0
DC Current Gain vs. Collector
Collector Current , I
Ambient Temperature, Ta (℃)
Total Power Dissipation Vs.
Collector to Emitter Voltage
0.5
25 50
Ambinet Temperature
Collector Current vs.
1
50
5
Current
75 100 125 150
10
100
V
50
C
30µA
20µA
I
CE
B
(mA)
=10µA
100
Free Air
=10V
150
500
CE
1000
175
(V)
QW-R204-023,A
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