2sc2688l-x-t60 Unisonic Technologies, 2sc2688l-x-t60 Datasheet
2sc2688l-x-t60
Related parts for 2sc2688l-x-t60
2sc2688l-x-t60 Summary of contents
Page 1
... ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC2688-x-T60-K 2SC2688L-x-T60-K 2SC2688L-x-T60-K (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd NPN EPITAXIAL SILICON TRANSISTOR 1 *Pb-free plating product number: 2SC2688L Pin Assignment ...
Page 2
... Collector Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feedback Capacitance Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2% CLASSIFICATION OF h Rank N Range UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN EPITAXIAL SILICON TRANSISTOR SYMBOL V CBO V CEO V EBO I C Ta=25 ℃ ...
Page 3
... BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR SW. C=2 300pF V D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN EPITAXIAL SILICON TRANSISTOR Open Collector TEST CONDITION 1. E-B reverse bias 2.C=2300pF 3. Apply on shot pulse to T.U.T. (Transistor Under the Test) by SW. T.U.T JUDGEMENT Reject; BV EBO As a result if T.U.T. is not rejected, apply higher voltage to capacitor and test again ...
Page 4
... Collector TO Emitter Voltage, V Collector Current vs. Base to Emitter Voltage 0.2 0.4 0.6 0.8 Base to Emitter Voltage, V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN EPITAXIAL SILICON TRANSISTOR (Ta=25 ℃ ) 1.5 1.25 1.0 0.75 0.5 0.25 0 3.0 150µA 2.5 2.0 100µA 1.5 1.0 I =50µ (V) Collector TO Emitter Voltage, V ...
Page 5
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN EPITAXIAL SILICON TRANSISTOR I =10· ...