2sa2203 Sanyo Semiconductor Corporation, 2sa2203 Datasheet

2sa2203

Manufacturer Part Number

2sa2203

Description

Pnp Epitaxial Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SA2203.pdf (4 pages)

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Ordering number : ENA0542

2SA2203

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

•

DC / DC converter, Relay drivers, lamp drivers, motor drivers.

Adoption of FBET, MBIT processes.

Large current capacitance.

Low collector-to-emitter saturation voltage.

High-speed switching.

High allowable power dissipation.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

PNP Epitaxial Planar Silicon Transistor

High-Current Switching Applications

Symbol

V CBO

V CEO

V EBO

V CES

I CBO

I EBO

Tstg

h FE

Cob

I CP

P C

I C

I B

f T

SANYO Semiconductors

Tc=25 C

V CB =- -50V, I E =0A

V EB =- -4V, I C =0A

V CE =- -2V, I C =--100mA

V CE =- -10V, I C =--500mA

V CB =- -10V, f=1MHz

2SA2203

Conditions

DATA SHEET

N0806EA SY IM TC-00000305

min

200

Ratings

typ

Ratings

400

Continued on next page.

--55 to +150

max

--600

150

--60

0.8

400

--7

--3

--5

No. A0542-1/4

--1

Unit

MHz

Related parts for 2sa2203

2sa2203 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SA2203 SANYO Semiconductors PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications ...

Page 2

... D. INPUT 220 F 470 = --30V --10I B1 =10I B2 = --0.5A 2SA2203 Symbol Conditions V CE (sat =--1A =--50mA V CE (sat =--1A =--100mA V BE (sat =--1A =--100mA V (BR)CBO I C =-- =0A V (BR)CES I C =--100 ...

Page 3

... Collector-to-Base Voltage (sat = --0 --0. --0.01 --0.1 Collector Current 2SA2203 --3 --2V --2.5 --2.0 --1.5 --1.0 --0 =0mA 0 --0.40 --0.45 --0.50 0 IT11642 1000 -- 100 --1.0 --0.01 IT11644 5 f=1MHz ...

Page 4

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. 2SA2203 -- -- ...

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