2sa2188 ISAHAYA ELECTRONICS CORPORRATION, 2sa2188 Datasheet - Page 2

• Manufacturer Part Number: 2sa2188
• Description: For General Purpose High Current Drive Application Silicon Pnp Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
10000
-1000
1000
300
250
200
150
100
-800
-600
-400
-200
100
50
10
0
COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE
-0
-0.1
0
-0
VCE=-4V
IB=-10mA
DC FORWARD CURRENT GAIN VS.
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COMMON EMITTER OUTPUT(1)
-1
IB=-9mA
COLLECTOR CURRENT
-1
COLLECTOR CURRENT IC (mA)
AMBIENT TEMPERATURE Ta(℃)
50
IB=-8mA
85℃
-2
-40℃
Pc=200mW
IB=-7mA
ISAHAYA ELECTRONICS CORPORATION
-10
IB=-6mA
25℃
-3
IB=-5mA
100
-100
-4
IB=-4mA
IB=0mA
IB=-3mA
IB=-2mA
IB=-1mA
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
Ta=25℃
Ta=25℃
-1000
-5
150
500
400
300
200
100
-1000
-0.01
-100
0
-200
-160
-120
-0.1
-10
-80
-40
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
-1
1
-0
-0.1
-0
VCE=-6V
Ta=25℃
VCE=-4V
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COMMON EMITTER TRANSFER
COMMON EMITTER OUTPUT(2)
IB=0mA
BASE TO EMITTER VOLTAGE VBE (V)
IB=-0.6mA
SILICON PNP EPITAXIAL TYPE
-5
85℃
EMITTER CURRENT IE(mA)
10
IB=-0.5mA
-10
-1
2SA2188
25℃
-40℃
IB=-0.4mA
100
-15
IB=-0.3mA
Pc=200mW
IB=-0.2mA
IB=-0.1mA
Ta=25℃
-10
-20
1000