2sa2188 ISAHAYA ELECTRONICS CORPORRATION, 2sa2188 Datasheet
2sa2188
Related parts for 2sa2188
2sa2188 Summary of contents
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... PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. DESCRIPTION ISAHAYA 2SA2188 is a silicon PNP epitaxial type transistor designed with high collector current, low V FEATURE ●High collector current I =-650mA C（MAX） ●Low collector to emitter saturation voltage V <-0.7V CE（sat） ...
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... Ta=25℃ Ta=25℃ -200 -160 IB=-5mA IB=-4mA -120 IB=-3mA IB=-2mA -80 IB=-1mA -40 IB=0mA - 2SA2188 SILICON PNP EPITAXIAL TYPE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT Ta=25℃ VCE=- 100 EMITTER CURRENT IE(mA) COMMON EMITTER TRANSFER VCE=-4V 25℃ 85℃ -40℃ -1 -0.1 -1 BASE TO EMITTER VOLTAGE VBE (V) COMMON EMITTER OUTPUT(2) IB=-0 ...
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... COLLECTOR CURRENT IC(mA) ISAHAYA ELECTRONICS CORPORATION FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION 10 1 0.1 0.01 0.001 -100 -1000 0.01 2SA2188 SILICON PNP EPITAXIAL TYPE Ta=25℃ AREA OF SAFE OPERATION SINGLE PULSE 100msec 1sec 10msec ICMmax=-1.0A ICmax=-0.65A DC(200mW) 0 COLLECTOR TO EMITTER VOLTAGE VCE(V) ...
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Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...