2sa2062 Sanyo Semiconductor Corporation, 2sa2062 Datasheet
2sa2062
Manufacturer Part Number
2sa2062
Description
Pnp Epitaxial Planar Silicon Transistor Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.2SA2062.pdf
(4 pages)
Ordering number : ENN6987A
2SA2062 / 2SC5774
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
•
•
•
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Note*( ) : 2SA2062
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)CBO
V (BR)CEO
V (BR)EBO
V CE (sat)
Symbol
Symbol
h FE (1)
h FE (2)
V CBO
V CEO
V EBO
I CBO
I EBO
V BE
Tstg
Cob
I CP
t stg
P C
t on
I C
Tj
f T
t f
2SA2062 / 2SC5774
Tc=25 C
V CB =(--)160V, I E =0
V EB =(--)4V, I C =0
V CE =(--)5V, I C =(--)1A
V CE =(--)5V, I C =(--)5A
V CE =(--)5V, I C =(--)1A
V CB =(--)10V, f=1MHz
V CE =(--)5V, I C =(--)5A
I C =(--)5A, I B =(--)0.5A
I C =(--)5mA, I E =0
I C =(--)50mA, R BE =
I E =(--)5mA, I C =0
See specified test circuit.
See specified test circuit.
See specified test circuit.
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
140V / 10A, AF70W
Output Applications
Conditions
D1503 TS IM TA-100929 / 62501 TS IM TA-3317, 3318
Conditions
min
(--)160
(--)140
(--)6
60
35
(0.45)0.56
(280)140
(- -0.3)0.2
(1.75)3.3
(0.25)0.4
Ratings
(10)15
typ
Ratings
-55 to +150
max
(-)160
(-)140
(--)0.1
(--)0.1
(--)2.0
(-)10
(-)20
150
110
(-)6
160
2.5
1.5
No.6987-1/4
Unit
MHz
Unit
mA
mA
pF
V
V
V
V
V
W
W
V
V
V
A
A
C
C
s
s
s
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2sa2062 Summary of contents
Page 1
... Features Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process. • Specifications Note 2SA2062 Absolute Maximum Ratings at Ta=25 C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation ...
Page 2
... Collector-to-Emitter Voltage --8 2SA2062 --5V --7 --6 --5 --4 --3 --2 -- --0.5 Base-to-Emitter Voltage 2SA2062 / 2SC5774 Switching Time Test Circuit --7 --8 --9 --10 0 IT03410 ...
Page 3
... 2SC5774 0.1 1.0 Collector Current (sat 0.1 1.0 Collector Current 2SA2062 / 2SC5774 100 120 140 Ambient Temperature No.6987-3 IT03415 IT03417 160 IT03419 ...
Page 4
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2003. Specifications and information herein are subject to change without notice. 2SA2062 / 2SC5774 PS No.6987-4/4 ...