2sa2013 Sanyo Semiconductor Corporation, 2sa2013 Datasheet

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2sa2013

Manufacturer Part Number
2sa2013
Description
Pnp / Npn Epitaxial Planar Silicon Transistors
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Ordering number : ENN6307B
2SA2013 / 2SC5566
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : 2SA2013 : AT 2SC5566 : FC
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Relay drivers, lamp drivers, motor drivers, flash.
Adoption of FBET and MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitales miniaturization in end products.
High allowable power dissipation.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA2013
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
Symbol
V CBO
V CEO
V EBO
V CES
I CBO
I EBO
Tstg
h FE
I CP
P C
I C
I B
Tj
f T
2SA2013 / 2SC5566
Mounted on a ceramic board (250mm
Tc=25 C
V CB =(--)40V, I E =0A
V EB =(--)4V, I C =0A
V CE =(--)2V, I C =(- -)500mA
V CE =(--)10V, I C =(--)500mA
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Conditions
62405EA MS IM TB-00001405 / 52501 TS KT TA-3260
Conditions
2
0.8mm)
min
200
(360)400
Ratings
typ
Ratings
--55 to +150
Continued on next page.
(--50)100
(--50)100
(--)600
max
(--)50
(--)6
(--)4
(--)7
150
1.3
3.5
(--)1
(--)1
560
No.6307-1/5
Unit
MHz
Unit
mA
W
W
V
V
V
V
A
A
A
A
C
C

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2sa2013 Summary of contents

Page 1

... Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Marking : 2SA2013 : AT 2SC5566 : FC Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage ...

Page 2

... Collector-to-Emitter Voltage 2SA2013 / 2SC5566 Symbol Conditions Cob V CB =(--)10V, f=1MHz V CE (sat =(--)1A =(--)50mA V CE (sat =(--)2A =(- -)100mA V BE (sat =(--)2A =(- -)100mA V (BR)CBO I C =(--) =0A V (BR)CES I C =(--)100 ...

Page 3

... Collector Current (sat --10000 --1000 --100 -- --0.01 --0.1 --1.0 Collector Current 2SA2013 / 2SC5566 4.0 2SA2013 --2V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --1.0 --1.2 --1.4 0 IT00154 1000 2SA2013 -- 100 --1.0 --10 0 ...

Page 4

... Collector-to-Base Voltage IT00165 2SC5566 V CE =10V 0.1 1.0 Collector Current IT00167 2SA2013 / 2SC5566 100 120 140 Ambient Temperature IT00169 No.6307-4 100 7 10 160 ...

Page 5

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. 2SA2013 / 2SC5566 120 140 160 IT01533 PS No ...

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