2sc6022 Sanyo Semiconductor Corporation, 2sc6022 Datasheet - Page 2

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2sc6022

Manufacturer Part Number
2sc6022
Description
Npn Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Continued from preceding page.
Package Dimensions
unit : mm
7518-003
Switching Time Test Circuit
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
0.85
0.7
0.6
I C =20I B1 = --20I B2 =2.5A
1
9
8
7
6
5
4
3
2
1
0
INPUT
0
PW=20 s
D.C. 1%
2.3
6.5
5.0
50
2
4
0.1
2.3
Parameter
3
Collector-to-Emitter Voltage, V CE -- V
0.2
V R
V BE = --5V
0.3
I B1
100 F
I B2
R B
I C -- V CE
0.4
+
2.3
0.5
0.5
470 F
0.5
1.2
0.6
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
+
V CC =12V
V (BR)CBO
V (BR)CEO
V (BR)EBO
V CE (sat)
V BE (sat)
Symbol
0.7
Cob
t stg
t on
t f
OUTPUT
R L
0.8
I B =0mA
V CB =10V, f=1MHz
I C =2.5A, I B =50mA
I C =4A, I B =200mA
I C =2.5A, I B =50mA
I C =10 A, I E =0A
I C =1mA, R BE =
I E =10 A, I C =0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
0.9
IT09466
Package Dimensions
unit : mm
7003-003
1.0
2SC6022
0.85
0.6
1
Conditions
2.3
6.5
5.0
4
2
2.3
3
10
9
8
7
6
5
4
3
2
1
0
0
V CE =2V
0.1
0.2
0.5
Base-to-Emitter Voltage, V BE -- V
2.3
0.3
min
1.2
0.5
0 to 0.2
I C -- V BE
0.4
40
30
6
0.5
Ratings
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
typ
0.85
100
120
320
0.6
40
30
15
0.7
max
150
180
0.8
1.2
No.8355-2/4
0.9
IT09467
Unit
mV
mV
pF
ns
ns
ns
V
V
V
V
1.0

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