mje13003l-x-tn3-a-t Unisonic Technologies, mje13003l-x-tn3-a-t Datasheet - Page 6

• Manufacturer Part Number: mje13003l-x-tn3-a-t
• Description: Npn Silicon Power Transistors
• Manufacturer: Unisonic Technologies

MJE13003
TYPICAL CHARACTERISTICS
0.8
0.6
10
1.4
1.2
0.4
10
10
10
80
60
40
30
20
10
10
1
0
8
6
4
-1
1
2
0
1
4
3
-0.4
0.02
0.02
0.03
UNISONIC TECHNOLOGIES CO., LTD
T
0.03
www.unisonic.com.tw
V
J
CE
=150℃
125℃
100℃
25℃
75℃
50℃
REVERSE
=250V
0.05
-0.2
0.05
Base-Emitter Voltage, V
25℃
- - - - - -V
-55℃
T
J
Collector Current,I
Collector cut-off Region
Collector Current,I
0.07
0.07
Base-Emitter Voltage
=150℃
0.1
DC Current Gain
0.1
V
CE
CE
T
0
- - - - - -V
J
=2V
=5V
=-55℃
25℃
25℃
0.2
0.2
150℃
V
0.3
0.3
+0.2
BE(ON)
BE(SAT)
FORWARD
C
C
(A)
0.5 0.7
(A)
0.5 0.7
BE
@ V
@ I
+0.4
(V)
C
CE
/I
1
B
=2V
1
=3
+0.6
2
2
0.05
0.35
0.25
0.15
500
100
300
200
1.6
1.2
0.8
0.4
0.3
0.2
0.1
10
70
50
30
20
7
2
0
0
5
0.002
0.02
0.1
0.03
0.2
0.005 0.01
Collector-Emitter Saturation Region
Ic=0.1A
0.5
NPN SILICON TRANSISTOR
Ic/I
0.05
Collector Saturation Region
B
=3
0.07
Collector Current, I
1
Reverse Voltage, V
Cib
0.3A
Base Current, I
0.02
2
0.1
Capacitance
5
0.5A
0.05
25℃
0.2
10 20
0.1
0.3
1A
T
50
B
0.2
J
C
=-55℃
(A)
150℃
0.5
R
1.5A
(A)
100
(V)
T
J
0.7
=25℃
0.5
T
200 500
J
Cob
=25℃
1
QW-R204-004,H
1
1000
2
2
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