2n3866aub Microsemi Corporation, 2n3866aub Datasheet - Page 3

• Manufacturer Part Number: 2n3866aub
• Description: Npn Silicon High-frequency Transistor
• Manufacturer: Microsemi Corporation

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
NOTES:
T4-LDS-0175 Rev. 1 (101096)
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18
8. Dimension LU applies between L 1 and L 2 . Dimension LD applies between L 2 and LL minimum. Diameter is
9. All three leads.
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by gauging procedure.
uncontrolled in and beyond LL minimum.
TO-39
FIGURE 1. Physical dimensions (TO-39)
PACKAGE DIMENSIONS
TECHNICAL DATA SHEET
Symbol
TW
HD
CD
CH
LD
LU
LC
LL
TL
L
L
Q
P
α
r
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
1
2
.305
.240
.335
.016
.500
.016
.250
.100
.029
.028
Min
.200 TP
Inches
Max
.335
.260
.370
.021
.750
.019
.050
.030
.045
.034
.010
Dimensions
45° TP
12.70
7.75
6.10
8.51
Min
0.41
0.41
6.35
2.54
0.74
0.71
Millimeters
5.08 TP
19.05
Max
8.51
6.60
9.40
0.53
0.48
1.27
0.76
1.14
0.86
0.25
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Notes
8, 9
8, 9
8, 9
8, 9
8, 9
3, 4
10
7
6
7
5
3
7