2n3866aub Microsemi Corporation, 2n3866aub Datasheet

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2n3866aub

Manufacturer Part Number
2n3866aub
Description
Npn Silicon High-frequency Transistor
Manufacturer
Microsemi Corporation
Datasheet
1.2N3866AUB.pdf (4 pages)
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DEVICES
T4-LDS-0175 Rev. 1 (101096)
ABSOLUTE MAXIMUM RATINGS (T
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
NOTE:
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
Collector-Base Breakdown Voltage
I
Emitter-Base Breakdown Voltage
I
Collector-Emitter Cutoff Current
V
Collector-Emitter Cutoff Current
V
C
C
E
CE
CE
= 100µAdc
= 5.0mAdc
= 100µAdc
A
1. Derate linearly 5.71mW/°C (2N3866, 2N3866A) and 3.08mW/°C (2N3866UB /
2. T
3. P
= 28Vdc
= 55Vdc
= +25°C
2N3866AUB) above T
T
A
= 2.9W at T
= room ambient as defined in the general requirements of MIL-PRF-19500
Parameters / Test Conditions
Parameters / Test Conditions
2N3866
2N3866A
C
= +25°C, derate at 16.6mW/°C above T
A
> +25°C
HIGH-FREQUENCY TRANSISTOR
2N3866, A
2N3866UB / AUB
2N3866UB
2N3866AUB
C
= +25°C unless otherwise noted)
A
= +25°C, unless otherwise noted)
Qualified per MIL-PRF-19500/398
NPN SILICON
V
V
V
Symbol
Symbol
T
(BR)CEO
(BR)CBO
(BR)EBO
TECHNICAL DATA SHEET
I
V
V
V
I
R
CES1
j
CEO
, T
P
I
CEO
CBO
EBO
θJC
C
T
C
stg
> +25°C
Min.
-65 to +200
3.5
30
60
Value
60.0
305
400
1.0
0.5
30
60
Max.
100
20
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
mAdc
°C/W
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Unit
Vdc
Vdc
Vdc
°C
W
2N3866UB, 2N3866AUB
TO-39 (TO-205AD)
2N3866, 2N3866A
JANTXV
UB Package
JANTX
LEVELS
JANS
JAN
Page 1 of 4

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2n3866aub Summary of contents

Page 1

... Total Power Dissipation @ T = +25°C A Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case NOTE: 1. Derate linearly 5.71mW/°C (2N3866, 2N3866A) and 3.08mW/°C (2N3866UB / 2N3866AUB) above T > +25° room ambient as defined in the general requirements of MIL-PRF-19500 2. +25°C, derate at 16.6mW/°C above T ...

Page 2

... FE 2N3866, 2N3866UB 2N3866A, 2N3866AUB V CE(sat) I CES2 2N3866, 2N3866UB H FE3 2N3866A, 2N3866AUB Symbol |h fe 2N3866, 2N3866UB 2N3866A, 2N3866AUB C obo Symbol P 1out P 2out (BR)CEX Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Min. Max. ...

Page 3

Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TO-39 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be ...

Page 4

Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Letter LL2 NOTES: 1. Dimensions are ...

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