2n2905ahr STMicroelectronics, 2n2905ahr Datasheet

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2n2905ahr

Manufacturer Part Number
2n2905ahr
Description
Hi-rel Pnp Bipolar Transistor 60 V - 0.6 A
Manufacturer
STMicroelectronics
Datasheet
Features
Description
The 2N2905AHR is a silicon planar epitaxial PNP
transistors in TO-39 package. It is specifically
designed for aerospace Hi-Rel applications and
ESCC qualified according to the 5202-002
specification. In case of conflict between this
datasheet and ESCC detailed specification, the
latter prevails.
Table 1.
January 2010
Operating temperature range
Order codes
2N2905AHR
2N2905AHR
Hi-Rel PNP bipolar transistor
Linear gain characteristics
ESCC qualified
European preferred part list - EPPL
Radiation level: lot specific total dose contact
marketing for specified level
H
FE
at 10 V - 150 mA
I
C
BV
(max)
Device summary
CEO
Package
TO-39
TO-39
-65°C to +200°C
Lead finish
Solder Dip
> 100
0.6 A
60 V
Gold
Gold
Hi-Rel PNP bipolar transistor 60 V - 0.6 A
Doc ID 15295 Rev 2
2N2905AT1
520200201
520200202
Marking
Figure 1.
ESCC Flight
Engineering
model
Type
Internal schematic diagram
TO-39
2N2905AHR
EPPL
Yes
Packaging
Strip pack
Strip pack
www.st.com
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2n2905ahr Summary of contents

Page 1

... European preferred part list - EPPL ■ Radiation level: lot specific total dose contact marketing for specified level Description The 2N2905AHR is a silicon planar epitaxial PNP transistors in TO-39 package specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5202-002 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails ...

Page 2

... R Thermal resistance junction-case thJC R Thermal resistance junction-ambient thJA 2/8 Parameter = ≤ 25 °C amb ≤ 25 °C c Parameter __ max __ max Doc ID 15295 Rev 2 2N2905AHR Value Unit - -0 -65 to 200 °C 200 °C Value Unit 58 °C/W 291 °C/W ...

Page 3

... Electrical characteristics °C unless otherwise specified. case Table 4. Electrical characteristics Symbol Collector-base cut-off I CBO current (I Collector-base breakdown voltage V (BR)CBO ( Collector-emitter (1) breakdown voltage V (BR)CEO ( Emitter-base breakdown voltage V (BR)EBO ( Collector-emitter (1) V CE(sat) saturation voltage Base-emitter (1) V BE(sat) saturation voltage ...

Page 4

... Electrical characteristics 2.1 Test circuit Figure 2. Resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 4/8 Doc ID 15295 Rev 2 2N2905AHR ...

Page 5

... Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Doc ID 15295 Rev 2 Package mechanical data ® ...

Page 6

... Package mechanical data H 6 Doc ID 15295 Rev 2 2N2905AHR D A ...

Page 7

... Revision history Table 5. Document revision history Date 14-Jan-2009 05-Jan-2010 Revision 1 Initial release 2 Modified Table 1 on page 1 Doc ID 15295 Rev 2 Revision history Changes 7/8 ...

Page 8

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 8/8 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 15295 Rev 2 2N2905AHR ...

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