2sc5980 Sanyo Semiconductor Corporation, 2sc5980 Datasheet - Page 2

• Manufacturer Part Number: 2sc5980
• Description: Npn Epitaxial Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm
2045B
Switching Time Test Circuit
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
0.85
0.6
0.7
2.3
I C =20I B1 = --20I B2 =2.5A
1
INPUT
PW=20 s
D.C. 1%
6.5
5.0
2
4
Parameter
3
50
V R
V BE = --5V
2.3
I B1
100 F
I B2
R B
2.3
+
0.5
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
470 F
V (BR)CBO
V (BR)CEO
V (BR)CES
V (BR)EBO
V CC =25V
V CE (sat)
V BE (sat)
Symbol
+
Cob
t stg
t on
f T
t f
OUTPUT
R L
V CE =10V, I C =500mA
V CB =10V, f=1MHz
I C =3.5A, I B =175mA
I C =2A, I B =40mA
I C =2A, I B =40mA
I C =10 A, I E =0
I C =100 A, R BE =
I C =1mA, R BE =
I E =10 A, I C =0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
2SC5980
Package Dimensions
unit : mm
2044B
0.85
0.6
Conditions
2.3
1
2
6.5
5.0
4
3
2.3
0.5
0 to 0.2
1.2
min
100
100
2.3
50
6
0.5
Ratings
typ
0.83
330
125
100
420
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
28
30
25
max
190
150
1.2
No.8091-2/4
Unit
MHz
mV
mV
pF
ns
ns
ns
V
V
V
V
V