2sc5933 Sanyo Semiconductor Corporation, 2sc5933 Datasheet - Page 2
2sc5933
Manufacturer Part Number
2sc5933
Description
Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.2SC5933.pdf
(4 pages)
Continued from preceding page.
Switching Time Test Circuit
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
100
1.0
10
16
14
12
10
8
6
4
2
7
5
3
2
7
5
3
2
0
0.1
0
1
2
INPUT
Parameter
PW=20 s
D.C. 1%
Collector-to-Emitter Voltage, V CE -- V
3
2
5 7
Collector Current, I C -- A
3
50
V R
V BE = --2V
1.0
I C -- V CE
h FE -- I C
4
2
I B1
100 F
I B2
R B
5
3
+
6
5 7
V CE (sat)
V BE (sat)
Symbol
h FE 1
h FE 2
470 F
t stg
7
t f
10
V CC =200V
+
8
I B =0
V CE =5V
OUTPUT
2
R L =
16.7
V CE =5V, I C =1A
V CE =5V, I C =18A
I C =16A, I B =4A
I C =16A, I B =4A
I C =12A, I B1 =2A, I B2 =--6A
I C =12A, I B1 =2A, I B2 =--6A
IT03583
IT03585
9
3
10
5
2SC5933
Conditions
0.01
1.0
0.1
10
26
24
22
20
18
16
14
12
10
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0
V CE =5V
I C / I B =5
2
0.2
3
Base-to-Emitter Voltage, V BE -- V
5
Collector Current, I C -- A
7
0.4
V CE (sat) -- I C
min
1.0
I C -- V BE
10
4
2
0.6
Ratings
3
typ
5
0.8
7
10
max
1.5
3.0
0.2
7
3
1.0
2
No.7417-2/4
IT03584
IT03586
3
Unit
V
V
s
s
1.2
5