2sc5808 Sanyo Semiconductor Corporation, 2sc5808 Datasheet

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2sc5808

Manufacturer Part Number
2sc5808
Description
Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENN7079
Features
High breakdown voltage.
High speed switching.
Wide ASO.
Adoption of MBIT process.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
Switching Power Supply Applications
2SC5808
Package Dimensions
unit : mm
2045B
Package Dimensions
unit : mm
2044B
0.85
0.6
2.3
1
NPN Triple Diffused Planar Silicon Transistor
0.85
0.6
2
0.7
6.5
5.0
2.3
4
1
3
6.5
5.0
2
4
2.3
3
[2SC5808]
[2SC5808]
2.3
0.5
O2501 TS IM TA-3412
0 to 0.2
1.2
2.3
2.3
0.5
0.5
1.2
2SC5808
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
No.7079-1/4

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2sc5808 Summary of contents

Page 1

... NPN Triple Diffused Planar Silicon Transistor Switching Power Supply Applications Package Dimensions unit : mm 2045B 6.5 5.0 4 0.85 0.7 0 2.3 Package Dimensions unit : mm 2044B 6.5 5 0.6 2.3 2.3 2SC5808 [2SC5808] 2.3 0.5 1.2 0 Base 2 : Collector Emitter 4 : Collector SANYO : TP 2.3 [2SC5808] 2.3 0.5 0 Base 1 Collector Emitter 4 : Collector SANYO : TP-FA O2501 TS IM TA-3412 No.7079-1/4 ...

Page 2

... Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Switching Time Test Circuit I B1 PW= INPUT 100 --5V 2SC5808 Symbol Conditions V CBO V CES V CEO V EBO 300 s, duty cycle 10 Tc= Tstg Symbol Conditions ...

Page 3

... Collector Current Forward Bias = =2. Tc=25 C Single pulse 0. 1.0 Collector-to-Emitter Voltage 2SC5808 2.5 2.0 1.5 1.0 0 IT03719 = ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2001. Specifications and information herein are subject to change without notice. 2SC5808 ...

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