2sc5337-t1 Renesas Electronics Corporation., 2sc5337-t1 Datasheet - Page 2

• Manufacturer Part Number: 2sc5337-t1
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
2nd Order Intermoduration
Distortion
3rd Order Intermoduration Distortion
FE
Notes 1. Pulse measurement: PW
h
Marking
CLASSIFICATION
FE
Rank
Value
2. R
Parameter
S
= R
L
= 50
40 to 80
QQ
QQ
, tuned
Symbol
h
NF
NF
FE
S
I
I
IM
IM
CBO
EBO
21e
60 to 120
Note 1
Note 2
Note 2
2
3
350 s, Duty Cycle
QR
QR
2
A
V
V
V
V
V
V
V
V
f
V
V
f
2
2
= +25 C)
CB
BE
CE
CE
CE
CE
CE
in
CE
in
= 90 MHz, f = f
= 200 MHz, f = 2
Data Sheet P10939EJ2V1DS
= 105 dB V/75
= 105 dB V/75
= 2 V, I
= 20 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
C
100 to 200
Test Conditions
E
C
C
C
C
C
C
= 0 mA
= 0 mA
= 50 mA
= 50 mA, f = 1 GHz
= 50 mA, f = 500 MHz
= 50 mA, f = 1 GHz
= 50 mA, R
= 50 mA, R
QS
QS
1
2%
f
, f
, f
2
f
1
1
1
= 190 MHz,
= 190 MHz,
f
S
S
2
= R
= R
L
L
= 75
= 75
,
,
MIN.
7.0
40
–
–
–
–
–
–
TYP.
0.01
0.03
59.0
82.0
120
8.3
1.5
2.0
MAX.
200
5.0
5.0
3.5
3.5
–
–
–
2SC5337
Unit
dB
dB
dB
dB
dB
–
A
A