2sc5337-t1 Renesas Electronics Corporation., 2sc5337-t1 Datasheet

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2sc5337-t1

Manufacturer Part Number
2sc5337-t1
Description
Npn Silicon Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. P10939EJ2V1DS00 (2nd edition)
Date Published September 2001 NS CP(K)
Printed in Japan
FEATURES
• Low distortion: IM
• Low noise
• 4-pin power minimold package with improved gain from the 2SC4536
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
2SC5337
2SC5337-T1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, consult your NEC sales representative.
Note Mounted on 16 cm
NF = 1.5 dB TYP. @ V
NF = 2.0 dB TYP. @ V
Part Number
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
Unit sample quantity is 25 pcs.
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
= 59.0 dB TYP., IM
25 pcs (Non reel)
1 kpcs/reel
CE
CE
2
= 10 V, I
= 10 V, I
0.7 mm (t) ceramic substrate (Copper plating)
NPN SILICON RF TRANSISTOR FOR
Quantity
C
C
Symbol
P
V
V
V
= 50 mA, f = 500 MHz
= 50 mA, f = 1 GHz
T
tot
I
T
The mark • • • • shows major revised points.
CBO
CEO
EBO
stg
C
Note
j
4-PIN POWER MINIMOLD
3
= 82.0 dB TYP. @ V
A
= +25 C)
DATA SHEET
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
65 to +150
Ratings
250
150
3.0
2.0
30
15
CE
NPN SILICON RF TRANSISTOR
= 10 V, I
Supplying Form
C
Unit
mA
W
V
V
V
C
C
= 50 mA
2SC5337
©
1996, 2001

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2sc5337-t1 Summary of contents

Page 1

... ORDERING INFORMATION Part Number Quantity 2SC5337 25 pcs (Non reel) 2SC5337-T1 1 kpcs/reel Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (T Parameter Collector to Base Voltage ...

Page 2

... mA 105 dB V/ 190 MHz 200 MHz 350 s, Duty Cycle 100 to 200 Data Sheet P10939EJ2V1DS 2SC5337 MIN. TYP. MAX. Unit – 0.01 5.0 A – 0.03 5 120 200 – 7.0 8.3 – dB – 1.5 3.5 dB – 2.0 3 – ...

Page 3

... Collector to Base Voltage V 300 0.4 mA 100 0 0 0.1 (V) CE INSERTION POWER GAIN vs. COLLECTOR CURRENT GHz 0 Data Sheet P10939EJ2V1DS 2SC5337 MHz ( CURRENT GAIN vs. COLLECTOR CURRENT 100 1 000 Collector Current I (mA ...

Page 4

... Remark The graphs indicate nominal characteristics 2 2– 2 tone each 2 tone each 2 tone each 300 (mA) Data Sheet P10939EJ2V1DS 2SC5337 NOISE FIGURE vs. COLLECTOR CURRENT GHz 100 Collector Current I (mA) C ...

Page 5

... Data Sheet P10939EJ2V1DS 2SC5337 S 22 ANG. MAG. ANG. (deg.) (deg.) 50.5 0.465 95.2 57.4 0.335 123.0 67.3 0.276 130.1 70.8 0.269 132.7 68.6 0.262 134.5 70.6 0.262 139.1 71.2 0.251 133.4 74 ...

Page 6

... PACKAGE DIMENSIONS 4-PIN POWER MINIMOLD (UNIT: mm) 0.42±0.06 6 4.5±0.1 2.1 1.6 0.8 1.5±0 0.46 ±0.06 0.25±0.02 0.42±0.06 1.5 3.0 PIN CONNECTIONS E : Emitter C: Collector B : Base Data Sheet P10939EJ2V1DS 2SC5337 ...

Page 7

... Data Sheet P10939EJ2V1DS 2SC5337 7 ...

Page 8

... NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 2SC5337 Not all The M8E 00. 4 ...

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