mtc2103bj4 Cystech Electonics Corp., mtc2103bj4 Datasheet - Page 3

• Manufacturer Part Number: mtc2103bj4
• Description: P-channel Enhancement Mode Power Mosfet
• Manufacturer: Cystech Electonics Corp.

P-CH Characteristics (Tc=25°C, unless otherwise specified)
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Qg(V
Qg(V
Static
MTC2103BJ4
Dynamic
Source-Drain Diode
MTC2103BJ4
t
tr
*2.Pulse width limited by maximum junction temperature.
t
Qgd *1
Symbol
Qgs *1
d(OFF)
Device
GS
d(ON)
V
BV
I
Qrr *1
V
GS
trr *1
t
I
R
Coss
SM
f
Crss
Ciss
S
I
I
G
I
SD
GS(th)
=-4.5V)*1
GSS
DSS
DS(ON)
D(ON)
=-10V)*1
FS
DSS
*1
*1
*2
*1
*1
*1
*1
*1
*1
*1
(RoHS compliant & Halogen-free package)
Min.
-30
-1
-6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CYStech Electronics Corp.
1320
Typ.
-1.5
500
460
7.2
2.2
5.5
2.2
16
36
60
10
10
28
15
55
2
-
-
-
-
-
-
-
-
Package
TO-252
Max.
± 100
-2.3
-9.2
-1.2
-25
45
76
-3
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
m Ω
m Ω
nC
nC
pF
ns
ns
V
V
A
V
S
nA
μA
μA
A
Test Conditions
V
V
V
V
V
V
V
V
V
I
V
R
V
I
I
D
F
F
G
GS
DS
DS
GS
DS
DS
DS
GS
GS
DS
GS
=I
=I
=-6A, V
=6 Ω
=0, I
= ± 20, V
=-15V, I
=0V, V
2500 pcs / Tape & Reel
S
S
=V
=-5V, I
=-24V, V
=-20V, V
=-5V, V
=-10V, I
=-4.5V, I
, V
, V
GS
GS
GS
D
=-250μA
, I
=0V
=0, dI
DS
DS
Shipping
D
D
DS
D
=-15V, V
GS
=-6A
D
=-250μA
=-15V, f=1MHz
=-1A, V
D
GS
GS
=-6A
=0
=-5A
=-10V
F
=0
=0, Tj=125°C
/dt=100A/μs
CYStek Product Specification
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 3/11
GS
GS
=-10V
=-10V,
Marking
2103