mtc2103bj4 Cystech Electonics Corp., mtc2103bj4 Datasheet

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mtc2103bj4

Manufacturer Part Number
mtc2103bj4
Description
P-channel Enhancement Mode Power Mosfet
Manufacturer
Cystech Electonics Corp.
Datasheet
N & P-Channel Enhancement Mode Power MOSFET
MTC2103BJ4
Features
• Low Gate Charge
• Simple Drive Requirement
• 100% UIS test @ V
• 100% UIS test @ V
• RoHS compliant & Halogen-free package
Equivalent Circuit
Absolute Maximum Ratings
MTC2103BJ4
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, I
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction and Storage Temperature Range
Note : *1
G:Gate D:Drain
S:Source
*2. Duty cycle ≤ 1%
.
MTC2103BJ4
Pulse width limited by maximum junction temperature
D
D
=15V, L=0.1mH, V
=15V, L=0.1mH, V
*1
C
C
=25℃)
=100℃)
Parameter
CYStech Electronics Corp.
C
C
=25°C
=100°C
D
=10A(-10A for P-ch),R
(T
C
G
G
=25°C, unless otherwise noted)
=10V, I
=-10V, I
*2
L
L
=7.5A, Rated V
=-6A, Rated V
Outline
BV
I
R
D
DSON(MAX)
G
=25Ω
DSS
DS
DS
TO-252-4L
Tj, Tstg
Symbol
=-30V, for P-CH
=30V, for N-CH
V
E
E
I
I
V
Pd
I
I
DM
AS
AR
AS
DS
D
D
GS
N-CH
30V
8A
21mΩ
N-channel P-channel
±20
2.5
30
32
15
8
6
5
-55~+175
CYStek Product Specification
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 1/11
Limits
25
18
P-CH
-30V
-6A
45mΩ
±20
-30
-24
-15
2.5
-6
-5
5
Unit
mJ
°C
W
V
A

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mtc2103bj4 Summary of contents

Page 1

... Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation (T =25℃) C Total Power Dissipation (T =100℃) C Operating Junction and Storage Temperature Range . Note : *1 Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% MTC2103BJ4 CYStech Electronics Corp DSON(MAX) =10V, I =7.5A, Rated =-10V, I ...

Page 2

... Crss - Source-Drain Diode trr *1 - Qrr *1 - Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature. MTC2103BJ4 CYStech Electronics Corp. 2 pad copper. Typ. Max. Unit - - V 1 ± 100 - - 1 μA ...

Page 3

... trr *1 - Qrr *1 - Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature. Ordering Information Device MTC2103BJ4 (RoHS compliant & Halogen-free package) MTC2103BJ4 CYStech Electronics Corp. Typ. Max. Unit - - V -1 ± 100 ...

Page 4

... On-Resistance Variation with Temperature 1 10V GS 1.6 1.3 1.0 0.7 0.4 -50 - Junction Temperature (° Transfer Characteristics 10V -55° 1.5 2 Gate-S ource Voltage MTC2103BJ4 CYStech Electronics Corp. 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 3.5V 0 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 75 100 125 150 100 10 25° 125°C 0.1 0.01 ...

Page 5

... 25°C A 0.01 0 Drain-S ource Voltage Transient Thermal Response Curve 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 S ingle Pulse 0.001 - MTC2103BJ4 CYStech Electronics Corp. 1500 1350 10V 1200 1050 900 750 600 450 300 150 100 s μ 40 1ms 10ms 100 0 ...

Page 6

... -10V G S 1.4 1.2 1.0 0.8 0.6 -50 - unction T em perature ° j Transfer C haracteristics -5. ate-S ource Voltage G S MTC2103BJ4 CYStech Electronics Corp. On-R esistance Variation with Drain C urrent and G ate Voltage 2.4 2 -4V -4. 2.0 1.8 -3.5V 1.6 1.4 -3.0V 1.2 1.0 0 0.12 0.09 0.06 0. 125 75 100 ...

Page 7

... θ ° 0. 0.1 -V ,Drain-S ource Voltage Transient Thermal Response Curve 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.01 0.001 0.0001 MTC2103BJ4 CYStech Electronics Corp. 1600 1400 -15V 1200 -10V 1000 800 600 400 200 100 s μ ...

Page 8

... Reel Dimension Carrier Tape Dimension MTC2103BJ4 CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 8/11 CYStek Product Specification ...

Page 9

... Recommended soldering footprint Unit : mm MTC2103BJ4 CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 9/11 CYStek Product Specification ...

Page 10

... P Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface. MTC2103BJ4 Peak Temperature 260 +0/-5 °C Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183° ...

Page 11

... CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC2103BJ4 CYStech Electronics Corp. Device Name ...

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