tc59lm906amg TOSHIBA Semiconductor CORPORATION, tc59lm906amg Datasheet - Page 47

• Manufacturer Part Number: tc59lm906amg
• Description: Mos Digital Integrated Circuit Silicon Monolithic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Bank, Address
AUTO-REFRESH TIMING (CL
DQS/ DQS
Command
(output)
(output)
CLK
CLK
CLK
DQ
WRA REF
Hi-Z
Hi-Z
Note: In case of CL
Bank,
I
RDA
RCD
UA
t
than Read / Write operation.
REFI
0
When the Auto-Refresh operation is performed, the synthetic average interval of Auto-Refresh
command specified by t
t
TC59LM914AMG doesn’t have DQS .
REFI
t
is specified to avoid partly concentrated current of Refresh operation that is activated larger area
1 cycle
1
t
REFI
LAL
LA
is average interval time in 8 Refresh cycles that is sampled randomly.
1
WRA REF
Total time of 8 Refresh cycle
I
RC
2
4, I
I
RAS
5 cycles
REFC
t
4, BL
CL
2
DESL 
REFI
3
4 cycles
must be meet 18 clock cycles.
4
8
WRA REF
must be satisfied.
4)
8 Refresh cycle
4
t
3
WRA
I
RCD
5
Q0 Q1 Q2 Q3
t
1
+ t
1 cycle
REF
2
6
+ t
3
+ t
TC59LM914/06AMG-37,-50

t
4
7
8
+ t
7
I
REFC
WRA REF
5
+ t
6
n  1
+ t
18 cycles
DESL
7
+ t
t
8
Hi-Z
Hi-Z
8
2004-08-20 47/59
n
WRA REF
n  1
WRA
RDA
or
Rev 1.0
MRS or
LAL or
n  2
REF