tps30150ct STMicroelectronics, tps30150ct Datasheet
tps30150ct
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tps30150ct Summary of contents
Page 1
... Mode Power Parameter TO-220FPAB Tc = 110°C TO-220AB Tc = 155°C TO-247 sinusoidal tp = 1µ 25° TO-220FPAB STPS30150CFP TO-220AB STPS30150CT Value Unit 150 per diode 15 A per device 30 220 A 10500 175 °C 175 °C 10000 V/µ ...
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... STPS30150CT/CW/CFP THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * ms, < 380 µs, < 2% ...
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... IM(A) 140 120 100 80 Tc=50°C 60 Tc=75° Tc=125° =0.5 0 1E-3 1E+0 Fig. 6-2: Relative variation of thermal impedance junction to case (TO-220FPAB) Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 = 0.5 0 0.1 0.2 Single pulse =tp/T tp 0.0 1E-3 1E-2 1E+0 STPS30150CT/CW/CFP T (° 100 125 150 Tc=25°C Tc=75°C Tc=125°C t(s) 1E-2 1E-1 1E+0 versus pulse duration. T tp(s) tp =tp/T 1E-1 1E+0 1E+1 3/6 ...
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... STPS30150CT/CW/CFP Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(µA) 1E+5 Tj=175°C 1E+4 Tj=150°C 1E+3 Tj=125°C 1E+2 Tj=100°C 1E+1 1E+0 Tj=25°C 1E 100 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=125°C Typical values 10 ...
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... Min 4.4 B 2.5 D 2.5 E 0.45 F 0. 1.15 G 4. 28.6 L4 9 15.9 L7 9.00 Dia. 3.00 STPS30150CT/CW/CFP DIMENSIONS Inches Max. Min. Max. 4.60 0.173 0.181 1.32 0.048 0.051 2.72 0.094 0.107 0.70 0.019 0.027 0.88 0.024 0.034 1.70 0.044 0.066 1.70 0.044 0.066 5.15 0.194 0.202 2.70 0.094 0.106 10.40 0.393 0.409 0.645 typ. ...
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... Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Ordering Type Marking STPS30150CT STPS30150CT STPS30150CFP STPS30150CFP STPS30150CW STPS30150CW Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...