pa886c02r Fuji Electric holdings CO.,Ltd, pa886c02r Datasheet

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pa886c02r

Manufacturer Part Number
pa886c02r
Description
Silicon Diode
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
CHECKED
CHECKED
DRAWN
FEB.-26-‘ 07
FEB.-26-‘ 07
FEB.-26-‘ 07
D A T E
N A M E
Device Name
Type Name
Spec. No.
S P E C I F I C AT I O N
APPROVED
SILICON DIODE
PA886C02R
MS5D3028
Fuji Electric Device Technology Co.,Ltd.
MS5D3028
1/12
H04-004-07b

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pa886c02r Summary of contents

Page 1

... Device Name Type Name Spec. No APPROVED FEB.-26-‘ 07 DRAWN FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 CHECKED : SILICON DIODE : PA886C02R : MS5D3028 Fuji Electric Device Technology Co.,Ltd. MS5D3028 1/12 H04-004-07b ...

Page 2

Revised Classi- Date Ind. fication FEB.-26 Enactment ― -2007 Fuji Electric Device Technology Co.,Ltd. Records Applied Content Drawn date Issued ―――――― date Checked Approved MS5D3028 2/12 H04-004-06b ...

Page 3

... SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE PA886C02R 2. OUT VIEW , MARKING , MOLDING RESIN , CHARACTERISTICS (1) Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot No. (3) Molding resin Epoxy resin ...

Page 4

TEST AND INSPECTION 4.1 STANDARD TEST CONDITION Standard test condition is Ta=25℃、65%R.H. If judgment is no doubt, the test condition is possible to test in normal condition Ta=5~35℃、48~85%R.H. 4.2 STRUCTURE INSPECTION It inspect with eye and measure, Item 2 ...

Page 5

Test Test Testing methods and Conditions No. Items 1 High Temp. Temperature :Tstg max Storage Test duration : 1000h 2 Low Temp. Temperature :Tstg min Storage Test duration : 1000h 3 Temperature Temperature : 85±2°C Humidity Relative humidity : 85±5% ...

Page 6

Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the ...

Page 7

Installation ・Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Table 1: Solder temperature and duration Solder Method temperature Flow 260±5℃ Soldering ...

Page 8

PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ) , substances. ・This products does not contain Class-I ODS and Class-II ODS substances set force by ‘ Air A c ...

Page 9

Fuji Electric Device Technology Co.,Ltd. Sn-Cu dipping(Pb<1000ppm) MS5D3028 9/12 H04-004-03a ...

Page 10

Forward Characteristic (typ.) 100 10 1 0.1 0.01 0.0 0.1 0.2 0.3 VF Forward Voltage (V) Forward Power Dissipation (max 360° λ 9  8 Square wave =60°  Square wave =120° 7 ...

Page 11

Current Derating (Io-Tc) (max.) 130 125 120 115 110 105 100 95 360° λ VR=10V Average Output Current  :Conduction angle of forward current for each rectifier ...

Page 12

Fuji Electric Device Technology Co.,Ltd. Transient Thermal Impedance (max.) Rth j-c:1.2°C Time (sec) MS5D3028 12/12 H04-004-03a ...

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