pa2423l SiGe Semiconductor, pa2423l Datasheet - Page 4

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pa2423l

Manufacturer Part Number
pa2423l
Description
2.4 Ghz Power Amplifier Ic
Manufacturer
SiGe Semiconductor
Datasheet

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Quantity
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Part Number:
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AC Electrical Characteristics
Conditions: V
Notes: (1) Guaranteed by production test at T
13-DST-01 Rev 4.0 Jun-14-2006
2f,3f,4f,5f
Symbol
ΔP temp
/dV
IS
dP
STAB
P
G
PAE
IS
f L-U
21
OUT
G
OUT
CTL
VAR
12
I
OFF
I
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
output externally matched to 50Ω unless otherwise noted.
Frequency Range
Output Power @ P
Output Power @ P
Output Power variation over temperature
(-40 °C < T
Control Voltage Sensitivity
Power Added Efficiency at +22.5 dBm
Output Power
Gain @ P
Gain @ P
Gain @ P
Gain Variation over band (2400-2500 MHz)
Harmonics
Isolation in “OFF” State, P
V
Reverse Isolation
Stability (P
CC0
RAMP
= V
= 0V
CC1
IN
IN
IN
A
IN
= -22 dBm
= -10 dBm
= -6 dBm
<+85 °C)
= V
= +2 dBm, Load VSWR = 6:1)
CC2
Parameter
IN
IN
= V
=+2 dBm, V
=+2 dBm, V
RAMP
IN
= +2 dBm,
= 3.3 V, V
CTL
CTL
A
= 25 °C.
= 3.3 V
= 0.4 V
CTL
= 3.3 V, P
Note
3, 4
3
1
1
3
3
3
3
2
2
2
IN
All non-harmonically related outputs less than
-50 dBc
= +2 dBm, T
2400
Min.
25.5
25.0
23.5
32
20
15
2.4 GHz Power Amplifier IC
A
Typ.
22.5
26.5
25.4
24.0
-40
-20
0.7
45
20
42
1
= 25 °C, f = 2.45 GHz, input and
2500
120
-35
1.0
Max.
0
2
PA2423L
dBm/V
Unit
MHz
dBm
dBm
dBc
dB
dB
dB
dB
dB
dB
dB
%
4 of 10
Final

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