pa2423l SiGe Semiconductor, pa2423l Datasheet - Page 3

• Manufacturer Part Number: pa2423l
• Description: 2.4 Ghz Power Amplifier Ic
• Manufacturer: SiGe Semiconductor

Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is
a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling and assembly of this
device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: V
13-DST-01 Rev 4.0 Jun-14-2006
Symbol
Symbol
ΔIcc
V
V
V
T
V
I
V
V
I
RAMP
stdby
RAMP
I
T
IN
CTL
STG
T
CC
CTL
CTL
CC
CC
A
j
temp
output externally matched to 50Ω unless otherwise noted.
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Supply Voltage
Supply Current (I
V
Supply Current variation over temperature
from T
(-40 °C < T
PA Output Power Control Voltage Range
Current sunk by V
Logic High Voltage
Logic Low Voltage
Leakage Current when V
V
CC0
CTL
CTL
= high, No RF Applied.
= 3.3 V
= V
A
= 25 °C
CC1
A
= V
< +85 °C)
CC2
Parameter
CC
CTL
= I
= V
Parameter
pin
VCC0
RAMP
RAMP
+ I
= 0 V,
= 3.3 V, V
VCC1
+ I
VCC2
CTL
),
= 3.3V, P
Note
1
3
1
3
3
1
IN
= +2 dBm, T
Min.
2.7
2.0
0
Min.
-0.3
-0.3
-0.3
-40
-40
2.4 GHz Power Amplifier IC
A
Typ.
125
200
3.3
0.5
25
= 25 °C, f = 2.45 GHz, input and
+150
+150
Max.
+3.6
V
V
+85
+8
CC
CC
Max.
150
V
250
3.6
0.8
10
CC
PA2423L
Unit
dBm
Unit
mA
μA
μA
°C
°C
°C
%
V
V
V
V
V
V
V
3 of 10
Final