pa2423u SiGe Semiconductor, pa2423u Datasheet - Page 9

• Manufacturer Part Number: pa2423u
• Description: 2.4 Ghz Bluetoothtm Power Amplifier Ic
• Manufacturer: SiGe Semiconductor

Applications Information
For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423U. The order part
number for the evaluation board is PA2423U-EV1. The evaluation board is intended to simplify the testing with
respect to RF performance of this power amplifier.
The application note, 131-DST-02 provides the supporting information for using the evaluation board. It contains
information on the schematic, bill of materials and recommended layout for the power amplifier and the input and
output matching networks. To assist in the design process, this layout is available, upon request, in gerber file format.
Using V
V
Bluetooth
between the radio and the antenna while consuming a modest 1 μA. In transmit mode, V
and PA2423U offers 19 dB to 21 dB of large signal gain.
Using V
V
adjust the gain between -15 dB and 21 dB. Used in combination with a variable drive level to PA2423U, the V
function can greatly optimize the PAE of the system at all four Bluetooth
131-DST-01 Rev 1.1 Apr-18-2006
RAMP
CTL
is an analog pin that is designed to control the gain of PA2423U. Applying a voltage between 0 V and V
is a digital pin used to power-up and power-down the PA2423U in time division duplex systems such as
RAMP
CTL
TM
1.1. During receive mode, V
RAMP
voltage is pulled down, PA2423U acts as a 35 dB isolation block
2.4 GHz Bluetooth
TM
transmitted power levels.
RAMP
tm
Power Amplifier IC
voltage is pulled to V
PA2423U
Preliminary
9 of 10
CC
will
CTL
CC