pa2423u SiGe Semiconductor, pa2423u Datasheet - Page 3

• Manufacturer Part Number: pa2423u
• Description: 2.4 Ghz Bluetoothtm Power Amplifier Ic
• Manufacturer: SiGe Semiconductor

Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is
ESD sensitive. Handling and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: V
131-DST-01 Rev 1.1 Apr-18-2006
ΔIcc
Symbol
Symbol
V
V
V
T
V
I
V
V
I
RAMP
stdby
RAMP
I
T
IN
CTL
STG
T
CC
CTL
CTL
CC
CC
TEMP
A
j
externally matched to 50Ω unless otherwise noted.
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Supply Voltage
Supply Current (I
V
Supply Current variation over temperature
from T
(-40 °C < T
PA Output Power Control Voltage Range
Current sunk by V
Logic High Voltage
Logic Low Voltage
Leakage Current when V
V
CC0
CTL
CTL
= 3.3 V, P
= high
= V
A
= 25 °C
CC1
A
= V
< +85 °C)
OUT_MAX
CC2
CC
Parameter
CTL
= I
= V
Parameter
pin
VCC0
≤ 22.5 dBm
RAMP
RAMP
+ I
= 0 V, No RF,
= V
VCC1
CTL
+ I
= 3.3 V, P
VCC2
),
IN
= 0 dBm, T
2.4 GHz Bluetooth
Min.
2.7
2.0
0
-
-
-
-
-
Min.
-0.3
-0.3
-0.3
-40
-40
A
-
-
= 25 °C, f = 2.45 GHz, input and output
Typ.
135
200
3.3
0.5
25
-
-
-
tm
+150
+150
Max.
+3.6
V
V
+85
+8
Power Amplifier IC
CC
CC
Max.
160
V
250
3.6
0.8
10
-
-
CC
PA2423U
Preliminary
Unit
dBm
Unit
mA
°C
°C
°C
μA
μA
V
V
V
%
V
V
V
V
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