mc9s12xd256 Freescale Semiconductor, Inc, mc9s12xd256 Datasheet - Page 1261
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mc9s12xd256
Manufacturer Part Number
mc9s12xd256
Description
Hcs12x Microcontrollers
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MC9S12XD256.pdf
(1350 pages)
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Freescale Semiconductor
Conditions are shown in
Num C
10
Restrictions for oscillator in crystal mode apply.
Minimum programming times are achieved under maximum NVM operating frequency f
f
Maximum erase and programming times are achieved under particular combinations of f
to formulae in Sections
Burst programming operations are not applicable to EEPROM
Minimum erase times are achieved under maximum NVM operating frequency, f
Minimum time, if first word in the array is not blank
Maximum time to complete check on an erased block
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7
8
9
bus
.
D External oscillator clock
D Bus frequency for programming or erase operations
D Operating frequency
D Flash burst programming consecutive word
D Flash burst programming time for 64 words
D Blank check time Flash per block
D Blank check time EEPROM per block
P Single word programming time
P Sector erase time
P Mass erase time
Table A-4
Section A.3.1.1, “Single Word Programming”
unless otherwise noted
Rating
Table A-17. NVM Timing Characteristics
MC9S12XDP512 Data Sheet, Rev. 2.17
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4
f
f
Symbol
NVMOSC
NVMBUS
f
–
t
t
NVMOP
t
bwpgm
t
t
swpgm
t
brpgm
check
check
mass
t
Section A.3.1.4, “Mass Erase”
era
NVMOP
1331.2
20.4
100
Min
150
46
20
11
11
0.5
1
2
5
6
6
.
5
2
NVMOP
NVMOP
2
Appendix A Electrical Characteristics
and maximum bus frequency
and bus frequency f
Typ
—
—
—
—
—
—
—
—
—
—
for guidance.
2027.5
65546
2058
74.5
26.7
133
Max
200
80
31
—
1
3
3
3
3
7
7
3
bus
. Refer
MHz
MHz
Unit
kHz
t
t
ms
ms
cyc
cyc
1261
s
s
s
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