mc9s08gt32a Freescale Semiconductor, Inc, mc9s08gt32a Datasheet - Page 51

• Manufacturer Part Number: mc9s08gt32a
• Description: Hcs08 Microcontrollers 8-bit Microcontroller Family
• Manufacturer: Freescale Semiconductor, Inc

4.4.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the flash array
does not need to be disabled between program operations. Ordinarily, when a program or erase command
is issued, an internal charge pump associated with the flash memory must be enabled to supply high
voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst
program command is issued, the charge pump is enabled and then remains enabled after completion of the
burst program operation if the following two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
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1. The next burst program command has been queued before the current program operation has
2. The next sequential address selects a byte on the same physical row as the current byte being
completed.
programmed. A row of flash memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
Figure 4-2. Flash Program and Erase Flowchart
0
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
MC9S08GB60A Data Sheet, Rev. 1.02
TO LAUNCH COMMAND
AND CLEAR FCBEF
WRITE TO FCDIV
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FACCERR ?
FPVIO OR
START
FCCF ?
DONE
1
NO
(1)
(2)
0
YES
(2)
checking FCBEF or FCCF.
Wait at least four bus cycles before
(1)
ERROR EXIT
after reset.
Only required once
Chapter 4 Memory
51