pip3119-p NXP Semiconductors, pip3119-p Datasheet - Page 3

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pip3119-p

Manufacturer Part Number
pip3119-p
Description
Logic Level Topfet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
OUTPUT CHARACTERISTICS
Limits are for -40˚C
OVERLOAD CHARACTERISTICS
V
1 Trip time t
2 This is independent of the dV/dt of input voltage V
May 2001
Logic level TOPFET
SYMBOL PARAMETER
V
I
R
SYMBOL PARAMETER
I
P
T
T
IS
DSS
D
DSC
j(TO)
(CL)DSS
D(TO)
DS(ON)
= 5 V; T
d sc
mb
varies with overload dissipation P
Off-state
Drain-source clamping voltage
Drain source leakage current
On-state
Drain-source resistance
Short circuit load
Drain current limiting
Overload protection
Overload power threshold
Characteristic time
Overtemperature protection
Threshold junction
temperature
= 25˚C unless otherwise specified.
T
mb
2
150˚C; typicals are for T
D
according to the formula t
IS
.
CONDITIONS
V
I
I
V
V
I
CONDITIONS
V
4.4 V
-40˚C
device trips if P
which determines trip time
D
DM
DM
IS
DS
IS
DS
= 10 mA
= 4 A; t
= 10 A
= 0 V
= 40 V
= 13 V
mb
4.4 V; t
= 25˚C unless otherwise specified
V
T
IS
mb
p
3
p
5.5 V;
300 s;
150˚C
d sc
D
300 s;
> P
T
DSC
D(TO)
/ ln[ P
T
T
mb
mb
0.01
1
D
0.01
/ P
= 25˚C
= 25˚C
D(TO)
].
MIN.
MIN.
28.5
200
150
50
50
21
75
-
-
-
-
TYP.
TYP.
185
380
170
0.1
60
22
43
-
-
-
-
Product specification
PIP3119-P
MAX.
MAX.
100
250
600
70
10
52
28
57
65
-
-
Rev 1.000
UNIT
UNIT
m
m
˚C
W
V
V
A
A
A
A
s

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