vnn3nv04 STMicroelectronics, vnn3nv04 Datasheet - Page 4

• Manufacturer Part Number: vnn3nv04
• Description: ??omnifet Ii?? Fully Autoprotected Power Mosfet
• Manufacturer: STMicroelectronics

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1
ELECTRICAL CHARACTERISTICS (continued) (T
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
PROTECTIONS (-40°C < T
(*) Pulsed: Pulse duration = 300 s, duty cycle 1.5%
4/21
2
Symbol
Symbol
(dI/dt)
Symbol
Symbol
V
g
C
t
t
t
t
I
SD
t
T
d(on)
d(off)
d(on)
d(off)
RRM
E
fs
T
Q
I
dlim
OSS
Q
I
t
lim
t
t
t
t
jsh
gf
rr
jrs
as
r
r
f
f
rr
(*)
i
(*)
on
Forward
Transconductance
Output Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Drain Current Limit
Step Response Current
Limit
Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Single Pulse
Avalanche Energy
Parameter
Parameter
Parameter
Parameter
j
< 150°C, unless otherwise specified)
V
V
V
V
(see figure 1)
V
V
(see figure 1)
V
V
V
I
I
I
V
(see test circuit, figure 2)
V
V
V
starting T
V
(see figures 3 & 4)
gen
SD
SD
DD
DS
DD
gen
DD
gen
DD
gen
DD
DD
IN
IN
IN
IN
=1.5A; V
=1.5A; dI/dt=12A/ s
=5V; V
=5V; V
=5V; V
=5V R
=2.13mA (see figure 5)
=13V; f=1MHz; V
=13V; I
=15V; I
=15V; I
=15V; I
=12V; I
=30V; L=200 H
=5V; R
=5V; R
=5V; R
j
=25°C; V
gen
DS
DS
DS
Test Conditions
D
Test Conditions
Test Conditions
Test Conditions
D
D
D
D
gen
gen
gen
IN
=1.5A
=1.5A
=1.5A
=1.5A
=1.5A; V
=13V
=13V
=13V; T
=R
=0V
=R
=2.2 K
=R
IN MIN
j
IN MIN
IN MIN
=25°C, unless otherwise specified)
DD
j
IN
=T
IN
=220
=24V
=0V
=220
=220
=5V
jsh
L=24mH
Min
Min
Min
Min
150
135
100
3.5
10
Typ
150
0.45
Typ
Typ
5.0
Typ
250
250
107
175
450
0.8
0.7
2.5
3.3
2.0
4.7
8.5
90
37
10
15
5
Max
1350
Max
Max
Max
1.35
10.0
300
750
750
200
7.5
6.0
20
7
Unit
A/ s
Unit
Unit
Unit
mA
pF
mJ
nC
ns
°C
°C
S
ns
ns
ns
ns
V
A
A
C
s
s
s
s
s