ncp5361 ON Semiconductor, ncp5361 Datasheet - Page 10

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ncp5361

Manufacturer Part Number
ncp5361
Description
4.0 A Synchronous Buck Power Mosfet Driver
Manufacturer
ON Semiconductor
Datasheet
Conditions: V
Room Temperature.
Figure 14. Top Gate Rise Time
S
= 5.0 V; BST − DRN = 5.0 V; C
Burst (2)
Gated
Pulse
+5.0 V
4.0 V
1.0 k
DRN
TYPICAL PERFORMANCE CHARACTERISTICS
R1
+
CO
BG
TG
Figure 13. Nonoverlap Test Configuration
EN
CO
PGND
LOAD
V
S
= 5.7 nF;
tpdhBG
(non−overlap)
DRN
BST
BG
TG
http://onsemi.com
tpdlBG
tpdhTG
(non−overlap)
10
tpdlTG
Pulse
Input
C4
100 nF
Conditions: V
Room Temperature.
R2
50
+
C2
10 μF
Figure 15. Top Gate Fall Time
S
= 5.0 V; BST − DRN = 5.0 V; C
C1
10 μF
C3
100 nF
LOAD
= 5.7 nF;

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