ncp5361 ON Semiconductor, ncp5361 Datasheet
ncp5361
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ncp5361 Summary of contents
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... NCP5361 4.0 A Synchronous Buck Power MOSFET Driver The NCP5361 is a dual MOSFET gate driver optimized to drive the gates of both high− and low−side Power MOSFETs in a Synchronous Buck converter. The NCP5361 is an excellent companion to multiphase controllers that do not have integrated gate drivers, such as ON Semiconductor’ ...
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− + 4.25 V − EN Thermal Shutdown CO PGND Table 1. Input−Output Truth Table tpdl BG V −V TG DRN DRN Figure 2. ...
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MAXIMUM RATINGS* Operating Junction Temperature Package Thermal Resistance: Junction to Case, R θJC Junction to Ambient, R θJA Storage Temperature Range Lead Temperature Soldering: MSL Rating *The maximum package power dissipation must be observed ...
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ELECTRICAL CHARACTERISTICS Parameter DC OPERATING SPECIFICATIONS Power Supply V Quiescent Current, Operating Quiescent Current, Operating V BST Quiescent Current, Non−Operating V Undervoltage Lockout Start Threshold Hysteresis Input Characteristics ...
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ELECTRICAL CHARACTERISTICS (continued) unless otherwise noted.) Parameter Symbol AC OPERATING SPECIFICATIONS High−Side Driver Rise Time tr TG Fall Time tf TG Propagation Delay Time, tpdh TG TG Going High (Nonoverlap Time) Propagation Delay Time, tpdl TG TG Going Low Low−Side ...
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CS1P CS3P 25 CS1N CS3N 26 CS2P CS4P 27 CS2N CS4N 28 ENABLE COMP 29 ID5 ID0 DRP ID1 V SGND 32 Figure 3. Application Diagram http://onsemi.com ...
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... IC pins, as shown in Figure 4(a), C21 and C17. GATE1 DRVON http://onsemi.com 7 ) after the drain drops below after BG drops below 2 V. (See Figure 2 for D32 C21 BAT54 1.0 μF U3 NCP5361 R33 C17 2.2 1.0 μF ( 80NO2 Q9 80NO2 ...
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TYPICAL PERFORMANCE CHARACTERISTICS COM HOT −5.0 V Conditions: BST − DRN = 5.0 V; Room Temperature; Oscilloscope referenced to V Figure 5. Top Gate Sinking Current from 0.108 −5 −5.0 V Figure ...
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TYPICAL PERFORMANCE CHARACTERISTICS +5 1 − Conditions 5 Room Temperature; DRN = 0 V. Figure 9. Bottom Gate Sourcing Current into 0.108 Figure 10. Bottom Gate Sourcing ...
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TYPICAL PERFORMANCE CHARACTERISTICS +5 1.0 k Gated Pulse Burst (2) + − 4.0 V DRN Conditions 5.0 V; BST − DRN = 5 Room Temperature. Figure 14. Top Gate Rise ...
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TYPICAL PERFORMANCE CHARACTERISTICS Conditions 5.0 V; BST − DRN = 5 Room Temperature. Figure 16. Bottom Gate Fall Time +5.0 V Input Pulse Figure 18. Bottom Gate and Top ...
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... D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NCP5361/D ...