pssi2512 Power Semiconductors, Inc., pssi2512 Datasheet - Page 4

• Manufacturer Part Number: pssi2512
• Description: Igbt Module
• Manufacturer: Power Semiconductors, Inc.

E
E
I
CM
on
on
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
mJ
40
30
20
10
mJ
A
6
4
2
0
0
3
2
1
0
Fig. 11 Reverse biased safe operating area
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
R
T
t
d(on)
E
VJ
G
on
= 82 Ω
200
t
= 125°C
20
r
400
10
40
600
60
800 1000 1200 1400
20
80
R
I
V
V
R
T
G
100
C
VJ
CE
GE
G
= 82Ω
= 600V
= ±15V
= 125°C
V
V
I
T
C
VJ
CE
GE
V
120
= 600V
= ±15V
CE
30
= 15A
= 125°C
t
E
25T120
t
25T120
d(on)
25T120
r
©
on
Ω
A
140
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
120
80
40
0
150
ns
100
50
0
ns
V
t
t
E
E
Z
0,0001
off
thJC
off
0,001
0,01
K/W
2,0
1,5
1,0
0,5
0,0
0,1
0,00001 0,0001 0,001
mJ
mJ
10
6
4
2
0
1
0
0
Fig. 12 Typ. transient thermal impedance RBSOA
PSIG PSI PSIS PSSI 25/12
Fig. 8 Typ. turn off energy and switching
Fig. 10 Typ. turn off energy and switching
E
off
20
V
V
R
T
times versus collector current times
versus collector current
VJ
CE
GE
G
times versus gate resistor times
versus gate resistor
= 82Ω
= 600V
= ±15V
10
= 125°C
40
single pulse
60
0,01
20
80
V
V
I
T
C
R
VJ
CE
GE
0,1
G
100
= 600V
I
= ±15V
= 15A
= 125°C
C
t
120
30
1
VDI...25-12P1
E
25T120
t
t
t
t
d(off)
d(off)
diode
f
IGBT
f
off
Ω
s
A
25T120
140
10
600
400
200
0
800
600
400
200
0
ns
ns
t
t