pssi2512 Power Semiconductors, Inc., pssi2512 Datasheet - Page 3

• Manufacturer Part Number: pssi2512
• Description: Igbt Module
• Manufacturer: Power Semiconductors, Inc.

I
I
V
C
C
GE
50
40
30
20
10
50
40
30
20
10
20
15
10
A
A
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
V
0
0
5
0
Fig. 5 Typ. turn on gate charge
0
4
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
1
T
6
VJ
V
20
GE
= 125°C
= 17V
2
15V
13V
V
I
C
8
CE
= 600V
= 15A
40
3
V
CE
10
= 20V
T
4
VJ
60
T
= 25°C
V
V
VJ
12
CE
GE
= 25°C
5
Q
G
80
14
6
nC
25T120
25T120
25T120
11V
V
©
V
9V
100
16
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
7
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C
RM
I
F
50
40
30
20
10
50
40
30
20
10
A
50
40
30
20
10
A
A
0
0
0
Fig. 6 Typ. turn off characteristics of
0
0
0
PSIG PSI PSIS PSSI 25/12
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics of
I
t
RM
rr
T
V
I
F
VJ
R
1
= 15A
= 600V
200
= 125°C
free wheeling diode
free wheeling diode
V
GE
1
T
2
= 17V
VJ
15V
13V
= 125°C
400
3
2
4
600
V
-di/dt
V
F
CE
5
T
3
T
VJ
800
VJ
A/µs
= 25°C
= 125°C
6
V
25T120
25T120
25T120
11V
V
9V
1000
7
4
200
160
120
80
40
0
ns
t
rr