pssi7512 Power Semiconductors, Inc., pssi7512 Datasheet - Page 2

• Manufacturer Part Number: pssi7512
• Description: Igbt Module
• Manufacturer: Power Semiconductors, Inc.

Reverse diodes (FRED)
Symbol
I
I
Symbol
V
I
t
R
R
Temperature Sensor NTC
Symbol
R
B
Module
Symbol
T
T
V
M
a
Symbol
d
d
Weight
F25
F80
RM
rr
S
VJ
stg
A
F
thJC
thJH
ISOL
25
25/50
d
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Conditions
T
T
Conditions
I
I
V
with heatsink compound (0.42 K/m.K; 50 µm)
Conditions
I
Mounting torque (M4)
Max. allowable acceleration
Conditions
Creepage distance on surface
Strike distance in air
Conditions
T = 25°C
F
F
ISOL
C
C
R
= 60 A;
= 60 A; di
= 25°C
= 80°C
= 600 V; V
1 mA; 50/60 Hz
F
T
T
/dt = 500 A/µs; T
VJ
VJ
GE
= 25°C
= 125°C
= 0 V
PSIG
(Pin to heatsink)
VJ
(Pin to heatsink)
= 125°C
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Maximum Ratings
Characteristic Values
4.75
min.
min.
Characteristic Values
11.2
11.2
min. typ.
Characteristic Values
-40...+150
-40...+150
Maximum Ratings
3375
1.5 - 2.0
2.28
1.67
1.32
typ.
14 - 18
200
5.0
typ.
41
24
3000
103
65
50
max.
max.
max.
0.66 K/W
5.25 k
2.6
PSIG PSI PSIS PSSI 75/12
lb.in.
m/s
K/W
N m
mm
mm
V~
°C
°C
ns
K
A
A
V
V
A
g
2
PSIS
PSI
PSSI
Package style and outline
Dimensions in mm (1mm = 0.0394“)