pssi7512 Power Semiconductors, Inc., pssi7512 Datasheet
pssi7512
Manufacturer Part Number
pssi7512
Description
Igbt Module
Manufacturer
Power Semiconductors, Inc.
Datasheet
1.PSSI7512.pdf
(4 pages)
K10
X16
L9
E2
E2
IGBTs
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
R
R
C25
C80
CES
GES
CM
SC
d(on)
r
d(off)
f
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
thJC
thJH
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
IGBT Module
Preliminary Data Sheet
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
PSI 75/12*
OP 9
GH 10
VX 18
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
= 75 A; V
= 2 mA; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= ±15 V; R
= 0 V; V
= 25 V; V
X15
CE
GE
X13
NTC
CES
CES
= 600 V; I
= 15/0 V; R
; V
;
GE
GE
GE
GE
GE
= 15 V; T
= ± 20 V
G
= V
V
= ±15 V; R
= 0 V; f = 1 MHz
= 22
GE
C
CE
= 60 A
G
= 0 V; T
VJ
= 22
T
= 125°C
; T
VJ
VJ
= 125°C
= 25°C
VJ
G
T
= 22 ; T
= 125°C
VJ
VJ
PSIG 75/12
PSI
PSIS 75/12*
PSSI 75/12*
(T
= 25°C
= 125°C
NTC
VJ
T16
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
L9
= 25°C, unless otherwise specified)
X16
X15
VJ
= 125°C
75/12*
PSIS 75/12*
min.
4.5
Characteristic Values
AC 1
IK 10
Maximum Ratings
0.66
100
500
typ.
2.7
3.0
9.1
6.7
3.3
70
70
1200
± 20
V
100
379
CES
92
62
10
max.
12.5 mA
0.33 K/W
200
3.2
6.5
3.7 mA
K/W
mJ
mJ
nA
nF
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
Features
Applications
Advantages
I
V
V
C25
NTC
LMN
CES
CE(sat)typ.
F1
L9
X15
X16
Package with DCB ceramic
base plate
Isolation voltage 3000 V
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Easy to mount with two screws
Space and weight savings
Improved temperature and
power cycling capability
High power density
Small and light weight
S
ECO-PAC
= 92 A
= 1200 V
= 2.7 V
A IJK
PSSI 75/12*
PSIG 75/12
IK 10
AC 1
*NTC optional
TM
2
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pssi7512 Summary of contents
Page 1
IGBT Module Preliminary Data Sheet X13 NTC X15 K10 X16 VX 18 PSI 75/12* IGBTs Symbol Conditions 25°C to 150°C CES VJ V GES 25°C C25 C ...
Page 2
Reverse diodes (FRED) Symbol Conditions 25°C F25 80°C F80 C Symbol Conditions 25° 125° ...
Page 3
T = 25° 100 0,0 0,5 1,0 1,5 2,0 V Fig. 1 Typ. output characteristics 120 25°C J 100 ...
Page 4
d(on Fig. 7 Typ. turn on energy and switching 600 V CE ...